Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Solution method for preparing high-efficiency CIS and CIGS thin-film solar cell

A technology of solar cells and copper indium gallium selenide, which is applied in the field of solar energy, can solve the problems affecting the performance of copper indium gallium selenide and the unstable existence of monovalent copper ions, etc., achieves cheap and easy to obtain, avoids redox reactions, and prevents metal ions The effect of hydrolysis

Active Publication Date: 2019-05-28
NANJING UNIV OF POSTS & TELECOMM
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the current reports on the preparation of CIS or CIGS solar cells by the solution method, most of the copper sources used are divalent copper, but in copper indium gallium selenide with a chalcopyrite structure, copper exists at a single valence, so in the formation of copper indium gallium selenide Redox reactions are required before the GaSe absorber layer, and the products of redox reactions may affect the performance of CIGS
Direct use of monovalent copper can avoid these redox reactions, but monovalent copper ions do not exist stably in aqueous solution, so it is necessary to find a suitable method to make monovalent copper stable in aqueous solution

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solution method for preparing high-efficiency CIS and CIGS thin-film solar cell
  • Solution method for preparing high-efficiency CIS and CIGS thin-film solar cell
  • Solution method for preparing high-efficiency CIS and CIGS thin-film solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0072] Example 1: A precursor solution was prepared using the synthesized thiourea complex of copper and indium as a raw material and water as a solvent, and a CIS solar cell was prepared with the solution.

[0073] Synthesis of copper thiourea complex (CuTU 3 Cl): Take 150mL of ultrapure water and add it to a 500mL beaker, heat it to 60°C, then add 30g of thiourea into it, and stir until completely dissolved. Weigh 6g of copper powder and add it to the solution, put it in an oil bath at 110°C, add 95mL of concentrated hydrochloric acid after the temperature rises to 110°C, observe that the red copper powder disappears, and a white solid appears, and the white solid continues to increase and becomes flocculent. Water makes the solution clear and transparent. Then filter while it is hot, and the filtrate is left to cool. After a period of time, a large amount of white elongated columnar solids appear at the bottom of the beaker. The obtained solid was filtered, washed with ac...

Embodiment 2

[0080] Example 2: Prepare a precursor solution by using the synthesized copper and indium thiourea complex as raw material and water as solvent, and prepare a CIS solar cell with the solution.

[0081] Preparation of precursor solution: weigh 0.9896g CuTU respectively 3 Cl and 1.8024g InTU 3 Cl 3 Add it to a 20mL sample bottle, then add 10mL of ultrapure water, stir magnetically at 85°C to obtain a colorless and transparent mixed solution, and filter the mixed solution with a 0.45μm PES filter membrane.

[0082] Preparation of copper indium sulfide (CIS) precursor film: fix the cleaned glass (molybdenum glass) coated with metal molybdenum on the suction cup of the homogenizer, measure the precursor solution with a pipette gun, and drop it on the molybdenum glass , 2000 rpm spin coating 30s. Immediately afterwards, the sample was heated (annealed) for 1 min on a hot stage preheated to 270°C. After the sample is cooled, repeat the above spin-coating-heating process 20 times....

Embodiment 3

[0085] Example 3: A precursor solution was prepared using the synthesized thiourea complex of copper, indium and gallium as a raw material and water as a solvent, and a CIGS solar cell was prepared with the solution.

[0086] Prepare CIGS precursor solution: weigh 0.35g CuTU respectively 3 Cl, 0.45g InTU 3 Cl 3 and 0.16g GaTU 6 Cl 3 Add it to a 20mL sample bottle, then add 10mL of ultrapure water, stir magnetically at 85°C to obtain a colorless and transparent mixed solution, and filter the mixed solution with a 0.45μm PES filter membrane.

[0087] Preparation of copper indium gallium sulfide (CIGS) precursor film: fix the cleaned glass (molybdenum glass) coated with metal molybdenum on the suction cup of the homogenizer, measure the precursor solution with a pipette gun, and drop it on the molybdenum glass On, spin coating at 2000 rpm for 30s. Immediately afterwards, the sample was heated (annealed) for 1 min on a hot stage preheated to 270°C. After the sample is cooled...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a solution method for preparing high-efficiency CIS and CIGS thin-film solar cell. Water and an alcohol solvent are taken as solvents for preparing a precursor solution; thiourea complexes or thiourea derivative complexes of copper, indium and gallium are synthesized; the synthesized complexes are used as raw materials or a combination of the synthesized copper complexes and metal chloride is used as a raw material and dissolved in water or an alcohol solvent to prepare a precursor solution, and the precursor solution is used for preparing the light absorption layer ofthe CIS and CIGS thin-film solar cell. The solvent used in the method is green, environment-friendly, cheap and easy to obtain, and the production cost can be greatly reduced. Metal ion hydrolysis andmetal oxide formation in the annealing process can be prevented, and meanwhile divalent copper defects in CIS and CIGS can be prevented from being formed. The copper-indium-sulfur and copper-indium-gallium-sulfur precursor films are prepared in an external atmospheric environment, and inert atmosphere protection is not needed.

Description

technical field [0001] The invention belongs to the technical field of solar energy, and specifically relates to a method for preparing high-efficiency copper indium selenium and copper indium gallium selenium thin-film solar cells by a solution method, especially a method for preparing high-efficiency copper indium selenium and copper indium selenium by a solution method using water or alcohol as a solvent GaSe thin film solar cell method. Background technique [0002] Copper indium gallium selenide (CuInGaSe2, CIGS) is a direct bandgap semiconductor material with high light absorption coefficient, adjustable optical bandgap, and good stability. It is a very promising light-absorbing material for thin-film solar cells. After years of development, the current laboratory efficiency of CIGS solar cells has surpassed that of polycrystalline silicon solar cells. In December 2017, the highest conversion efficiency of the CIGS solar cell laboratory prepared by Solar Frontier reac...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/032H01L31/0392H01L31/18C03C17/36
CPCY02E10/50Y02P70/50
Inventor 吴三平辛颢江晶晶闫伟博余绍棠
Owner NANJING UNIV OF POSTS & TELECOMM
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com