Polishing solution for 4H silicon carbide wafer and preparation method thereof

A technology of polishing liquid and silicon carbide, which is applied in the field of polishing liquid, can solve the problems of easy crystallization and scratches of abrasives, and achieve the effects of solving stability, reducing silicon dioxide crystallization, and increasing polishing effect

Inactive Publication Date: 2019-05-03
天津洙诺科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the prior art, the polishing liquid used for 4H silicon carbide wafers tends to crystallize during polishing, thus easily causing scratches

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] In the embodiment of the present invention, a polishing solution for 4H silicon carbide wafers includes the following raw materials in parts by weight: 20 parts of nano-silicon dioxide, 1 part of polyethylene glycol, 1 part of cubic boron carbide, 1 part of single crystal diamond, 0.5 part of hibiscus acid, 1 part of benzalkonium chloride, 5 parts of butyl stearate, 0.5 part of pH regulator, 0.5 part of ammonium persulfate, 40 parts of deionized water.

[0021] The preparation method of the described polishing liquid for 4H silicon carbide wafer, comprises the following steps:

[0022] 1) Each raw material component is weighed for subsequent use according to the weight ratio;

[0023] 2) Polyethylene glycol, hibiscus acid, benzalkonium chloride, butyl stearate, ammonium persulfate and deionized water are placed in a stirred tank, stirred for 30min, and the stirring speed of the stirred tank is 6500r / min, The stirring temperature is 80°C;

[0024] 3) Put nano silicon d...

Embodiment 2

[0027] In the embodiment of the present invention, a polishing solution for 4H silicon carbide wafers includes the following raw materials in parts by weight: 25 parts of nano-silicon dioxide, 2 parts of polyethylene glycol, 2 parts of cubic boron carbide, 2 parts of single crystal diamond, 1 part of hibiscus acid, 2 parts of benzalkonium chloride, 6 parts of butyl stearate, 1 part of pH regulator, 1 part of ammonium persulfate, 45 parts of deionized water.

[0028] The preparation method of the described polishing liquid for 4H silicon carbide wafer, comprises the following steps:

[0029] 1) Each raw material component is weighed for subsequent use according to the weight ratio;

[0030] 2) Polyethylene glycol, hibiscus acid, benzalkonium chloride, butyl stearate, ammonium persulfate and deionized water are placed in a stirred tank, stirred for 30min, and the stirring speed of the stirred tank is 6500r / min, The stirring temperature is 80°C;

[0031] 3) Put nano silicon dio...

Embodiment 3

[0034] In the embodiment of the present invention, a polishing solution for 4H silicon carbide wafers includes the following raw materials in parts by weight: 30 parts of nano-silicon dioxide, 3 parts of polyethylene glycol, 3 parts of cubic boron carbide, 3 parts of single crystal diamond, 1.5 parts of hibiscus acid, 4 parts of benzalkonium chloride, 7 parts of butyl stearate, 1.5 parts of pH regulator, 1.5 parts of ammonium persulfate, 50 parts of deionized water.

[0035] The preparation method of the described polishing liquid for 4H silicon carbide wafer, comprises the following steps:

[0036] 1) Each raw material component is weighed for subsequent use according to the weight ratio;

[0037] 2) Polyethylene glycol, hibiscus acid, benzalkonium chloride, butyl stearate, ammonium persulfate and deionized water are placed in a stirred tank, stirred for 30min, and the stirring speed of the stirred tank is 6500r / min, The stirring temperature is 80°C;

[0038] 3) Put nano si...

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Abstract

The invention discloses a polishing solution for a 4H silicon carbide wafer, and the polishing solution comprises the following raw materials in parts by weight: 20-40 parts of nano silicon dioxide, 1-5 parts of polyethylene glycol, 1-5 parts of cubic boron carbide, 1-5 parts of single crystal diamond, 0.5-2.5 parts of pseudolaric acid, 1-6 parts of benzalkonium chloride, 5-10 parts of butyl stearate, 0.5-2.5 parts of a pH regulator, 0.5-2.5 parts of ammonium persulfate and 40-60 parts of deionized water. The preparation method of the polishing solution for the 4H silicon carbide wafer comprises the following steps: weighing the raw materials according to the weight ratio for later use; adding the polyethylene glycol, the pseudolaric acid, the benzalkonium chloride, the butyl stearate, theammonium persulfate and the deionized water in a stirring kettle, and stirring for 20-30 minutes, wherein the stirring speed of the stirring kettle is 2800-6500 r / min; adding the nano silicon dioxide, the cubic boron carbide and the single crystal diamond into the stirring kettle, and stirring for 10-20 minutes, wherein the stirring speed of the stirring kettle is 600-1200 r / min; adding the pH value regulator, uniformly stirring, and filtering to obtain the polishing solution. According to the invention, the wafer cleaning efficiency is improved, the scratch probability is reduced, and the polishing effect of the 4H silicon carbide wafer is improved.

Description

technical field [0001] The invention relates to the field of polishing fluids, in particular to a polishing fluid for 4H silicon carbide wafers and a preparation method thereof. Background technique [0002] As the only stable compound of C and Si, SiC has a lattice structure composed of two densely arranged sublattices, and each Si (or C) atom and surrounding C (Si) atoms pass through oriented strong tetrahedral SP3 bonds. In combination, although the tetrahedral bond of SiC is strong, the energy of stacking fault formation is very low. This characteristic determines the polytype phenomenon of SiC. It has been found that SiC has more than 250 polytypes, and the C of each polytype The stacking order of the / Si diatomic layer is different. The most common polytypes are cubic close-packed 3C-SIC and hexagonal close-packed 4H, 6H-SiC. Different polytypes have different electrical and optical properties. The band gap of SiC is 2-3 times that of Si, the thermal conductivity is...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02
Inventor 伊观兰
Owner 天津洙诺科技有限公司
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