Polishing solution for 4H silicon carbide wafer and preparation method thereof
A technology of polishing liquid and silicon carbide, which is applied in the field of polishing liquid, can solve the problems of easy crystallization and scratches of abrasives, and achieve the effects of solving stability, reducing silicon dioxide crystallization, and increasing polishing effect
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Embodiment 1
[0020] In the embodiment of the present invention, a polishing solution for 4H silicon carbide wafers includes the following raw materials in parts by weight: 20 parts of nano-silicon dioxide, 1 part of polyethylene glycol, 1 part of cubic boron carbide, 1 part of single crystal diamond, 0.5 part of hibiscus acid, 1 part of benzalkonium chloride, 5 parts of butyl stearate, 0.5 part of pH regulator, 0.5 part of ammonium persulfate, 40 parts of deionized water.
[0021] The preparation method of the described polishing liquid for 4H silicon carbide wafer, comprises the following steps:
[0022] 1) Each raw material component is weighed for subsequent use according to the weight ratio;
[0023] 2) Polyethylene glycol, hibiscus acid, benzalkonium chloride, butyl stearate, ammonium persulfate and deionized water are placed in a stirred tank, stirred for 30min, and the stirring speed of the stirred tank is 6500r / min, The stirring temperature is 80°C;
[0024] 3) Put nano silicon d...
Embodiment 2
[0027] In the embodiment of the present invention, a polishing solution for 4H silicon carbide wafers includes the following raw materials in parts by weight: 25 parts of nano-silicon dioxide, 2 parts of polyethylene glycol, 2 parts of cubic boron carbide, 2 parts of single crystal diamond, 1 part of hibiscus acid, 2 parts of benzalkonium chloride, 6 parts of butyl stearate, 1 part of pH regulator, 1 part of ammonium persulfate, 45 parts of deionized water.
[0028] The preparation method of the described polishing liquid for 4H silicon carbide wafer, comprises the following steps:
[0029] 1) Each raw material component is weighed for subsequent use according to the weight ratio;
[0030] 2) Polyethylene glycol, hibiscus acid, benzalkonium chloride, butyl stearate, ammonium persulfate and deionized water are placed in a stirred tank, stirred for 30min, and the stirring speed of the stirred tank is 6500r / min, The stirring temperature is 80°C;
[0031] 3) Put nano silicon dio...
Embodiment 3
[0034] In the embodiment of the present invention, a polishing solution for 4H silicon carbide wafers includes the following raw materials in parts by weight: 30 parts of nano-silicon dioxide, 3 parts of polyethylene glycol, 3 parts of cubic boron carbide, 3 parts of single crystal diamond, 1.5 parts of hibiscus acid, 4 parts of benzalkonium chloride, 7 parts of butyl stearate, 1.5 parts of pH regulator, 1.5 parts of ammonium persulfate, 50 parts of deionized water.
[0035] The preparation method of the described polishing liquid for 4H silicon carbide wafer, comprises the following steps:
[0036] 1) Each raw material component is weighed for subsequent use according to the weight ratio;
[0037] 2) Polyethylene glycol, hibiscus acid, benzalkonium chloride, butyl stearate, ammonium persulfate and deionized water are placed in a stirred tank, stirred for 30min, and the stirring speed of the stirred tank is 6500r / min, The stirring temperature is 80°C;
[0038] 3) Put nano si...
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