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A kind of high temperature resistant composite transparent conductive film and preparation method thereof

A technology of transparent conductive film and high temperature resistance, applied to the conductive layer on the insulating carrier, equipment for manufacturing conductive/semiconductive layer, cable/conductor manufacturing, etc., can solve the problem of poor conductivity, failure, The color of the transparent conductive film deviates from the neutral color, etc., to achieve the effect of excellent light transmittance, low cost, and good conductivity

Active Publication Date: 2020-11-06
SHANDONG JINJING SCIENCE & TECHNOLOGY STOCK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the transparent conductive film with DMD structure is easy to deteriorate or even fail due to the oxidation of the metal layer in the subsequent processing process.
Moreover, the color of the transparent conductive film of the existing DMD structure deviates from the neutral color, which is not suitable for applications in the construction field such as smart windows.

Method used

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  • A kind of high temperature resistant composite transparent conductive film and preparation method thereof
  • A kind of high temperature resistant composite transparent conductive film and preparation method thereof
  • A kind of high temperature resistant composite transparent conductive film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] A kind of high temperature resistant and transparent composite transparent conductive film, the structure of the film layer is shown in the appendix figure 1 . Including transparent substrate 7, ion barrier layer 1 (SiNx), buffer layer 2 (SnO 2 / ITO), inner metal protective layer 3 (Ti), metal layer 4 (Ag), outer metal protective layer 5 (Ti), functional layer 6 (ZrO 2 / SiO 2 );

[0039] The thickness of the transparent substrate 7 is 3.2 mm, the thickness of the ion barrier layer 1 is 20nm~30nm, the thickness of the buffer layer 2 is 20~50nm, the thickness of the Ti layer of the inner metal protective layer 3 is 0.2~1.5nm, and the thickness of the metal layer 4 is 7~50nm. 14nm, the Ti layer thickness of the outer metal protective layer 5 is 0.2~1.5 nm, and the thickness of the functional layer 6 is 20~80nm;

[0040] The specific operation steps are as follows:

[0041] 1) Clean the transparent substrate 7 with a corresponding size and thickness of 3.2mm, and set t...

Embodiment 2

[0055] The film layer structure of the composite transparent conductive film is attached figure 1 . Including transparent substrate 7, ion barrier layer 1 (SiAlNx), buffer layer 2 (ZnSnOx / ZnO), inner metal protection layer 3 (Ti), metal layer 4 (Ag), outer metal protection layer 5 (NiCr), function Layer 6 (SnO 2 / AZO / ITO / SiZrOx);

[0056] The thickness of the transparent substrate 7 is 4 mm, the thickness of the ion barrier layer 1 is 10-50 nm, the thickness of the buffer layer 2 is 20-50 nm, the thickness of the inner metal protective layer 3 is 0.2-1.5 nm, and the thickness of the metal layer 4 is 7-14 nm , the outer metal protection layer 5 has a thickness of 0.2-1.5 nm, and the functional layer 6 has a thickness of 20-80 nm;

[0057] The specific operation steps are as follows:

[0058] 1) Clean the transparent substrate 7 with a thickness of 4mm of the corresponding size, and set the vacuum degree of the offline magnetron sputtering equipment at 10 -3 Pa, the line s...

Embodiment 3

[0070] See the attached film structure figure 1 . Including transparent substrate 7, ion barrier layer 1 (BiOx), buffer layer 2 (SnO2 / AZO), inner metal protection layer 3 (TiV), metal layer 4 (AgCu), outer metal protection layer titanium 5 (Ti), Functional layer 6 (AZO / ITO / TiO 2 ).

[0071] The transparent substrate 7 has a thickness of 3.2 mm, the ion barrier layer 1 has a thickness of 10-20 nm, the buffer layer 2 has a thickness of 20-80 nm, the inner metal protective layer 3 has a thickness of 0.2-0.9 nm, and the metal layer 4 has a thickness of 7-14 nm. The outer metal protective layer 5 has a thickness of 0.5-1.2 nm, and the functional layer 6 has a thickness of 20-80 nm;

[0072] The specific operation steps are as follows:

[0073] 1) Clean the ultra-white transparent substrate 7 with a thickness of 3.2mm of the corresponding size, and set the vacuum degree of the offline magnetron sputtering equipment at 10 -3 Pa, the line speed is set to 4.0 m / min;

[0074] 2) ...

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Abstract

A high temperature resistant composite transparent conductive film and a preparation method thereof belong to the technical field of conductive films. It is characterized in that: the layered structure is an ion barrier layer (1), a buffer layer (2), an inner metal protective layer (3), and a metal layer (4) on the upper surface of the transparent substrate (7) from inside to outside. ), the outer metal protection layer (5), and the functional layer (6); the materials of the inner metal protection layer (3) and the outer metal protection layer (5) are Ti, Cu, Al, Ni, Nb, V, Cr, nickel-chromium-vanadium alloy, vanadium-titanium alloy, aluminum-titanium alloy, aluminum-nickel alloy, nickel-chromium alloy, aluminum-vanadium alloy or copper-chromium alloy; inner metal protection layer (3) and outer metal protection layer (5) The thickness is 0.2nm~1.5nm. Each layer is prepared by magnetron sputtering on the transparent substrate in sequence; the conductive film of the present invention can be tempered, has neutral color transmission, low haze, and high temperature resistance.

Description

technical field [0001] A high temperature resistant composite transparent conductive film and a preparation method thereof belong to the technical field of conductive films. Background technique [0002] Transparent conductive film (TCO) is a film with high transparency and conductive properties in the visible light range. It is mainly used in transparent electrodes in flat-panel TVs, touch screens, smart window glass, light-emitting diodes, and photovoltaic cells. [0003] Among the transparent conductive films, the most widely used one is tin-doped indium oxide film, commonly known as ITO film. According to reports, when the ITO film thickness is 366nm, the sheet resistance is about 66Ω / £. The deposition rate of ITO is very small, and it is necessary to increase the thickness of ITO in order to achieve below 10Ω / £. The color deviates from neutral and takes on a yellowish tint. In order to solve the dependence on ITO, the development of doped zinc oxide, carbon-based tra...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B5/14H01B13/00
CPCH01B5/14H01B13/0026
Inventor 范晓玲季亚林
Owner SHANDONG JINJING SCIENCE & TECHNOLOGY STOCK CO LTD
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