A kind of anti-perovskite manganese nitrogen compound/aluminum composite material and preparation method thereof

A technology of manganese nitrogen compound and aluminum composite material, which is applied in the field of antiperovskite manganese nitrogen compound/aluminum composite material and its preparation, can solve the problems of poor mechanical properties, high temperature, low thermal conductivity, etc., and achieve high thermal conductivity, Low thermal expansion coefficient, the effect of reducing the interface reaction

Active Publication Date: 2020-09-22
HARBIN INST OF TECH
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  • Claims
  • Application Information

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Problems solved by technology

[0004] The present invention is to solve GaNMn prepared with epoxy resin as matrix 3 Poor mechanical properties and low thermal conductivity of composite materials, and preparation of GaNMn based on Cu 3 The problem of high temperature required for composite materials, a kind of anti-perovskite manganese nitrogen compound / aluminum composite material and its preparation method are proposed

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  • A kind of anti-perovskite manganese nitrogen compound/aluminum composite material and preparation method thereof

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specific Embodiment approach 1

[0020] Specific implementation mode 1: In this implementation mode, the antiperovskite manganese nitrogen compound / aluminum composite material is composed of a reinforcement and a matrix metal, and the reinforcement is GaNMn 3 Particles, the base metal is pure aluminum or aluminum alloy.

[0021] The principles and beneficial effects of this embodiment are:

[0022] 1. The base metal such as Cu has a high melting point, so it needs a higher recombination temperature. At high temperature, the base metal and GaNMn 3 The interfacial reaction is large during the recombination process of the reinforcement, and GaNMn 3 The composition of the reinforcement is prone to change and the negative thermal expansion properties will disappear. Compared with other base metals such as Cu, Al has a lower melting point, so this embodiment uses GaNMn 3 Combining with aluminum can lower the reaction temperature and reduce the interface reaction. This embodiment uses GaNMn 3 As an enhancer, in...

specific Embodiment approach 2

[0026] Specific embodiment two: the difference between this embodiment and specific embodiment one is: the GaNMn 3The particle size of the particles is 1-5 μm. Other steps and parameters are the same as those in the first embodiment.

specific Embodiment approach 3

[0027] Embodiment 3: This embodiment differs from Embodiment 1 or Embodiment 2 in that: the volume fraction of the reinforcement in the anti-perovskite manganese nitride / aluminum composite material is 20-30%. Other steps and parameters are the same as those in Embodiment 1 or 2.

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Abstract

An antiperovskite manganese nitrogen compound / aluminum composite material and a preparation method thereof, relating to an antiperovskite manganese nitrogen compound / aluminum composite material and a preparation method thereof. The antiperovskite manganese nitride compound / aluminum composite material is composed of reinforcement and matrix metal, and the reinforcement is GaNMn 3 Particles, the base metal is pure aluminum or aluminum alloy. Preparation: GaNMn 3 The particles are filled into the cavity of the graphite mold, the graphite mold is placed inside the iron mold, and the graphite mold and the iron mold are preheated under a protective atmosphere at the same time to carry out pressure impregnation. The invention is suitable for the preparation of metal matrix composite materials with large difference in thermal expansion coefficient between reinforcement particles and matrix alloy, and uses GaNMn 3 As a reinforcement, it compensates for the large thermal expansion coefficient of the base metal. Composite materials have high thermal expansion coefficient, bending strength, thermal conductivity, Vickers hardness and high density. The invention is suitable for preparing antiperovskite manganese nitrogen compound / aluminum composite material.

Description

technical field [0001] The invention relates to an antiperovskite manganese nitrogen compound / aluminum composite material and a preparation method thereof. Background technique [0002] The use of electronic products is getting closer and closer to people's lives. From tablets and mobile phones to automotive equipment and aircraft control units, electronic devices are used in most products today, and the environments in which electronic devices are used are increasingly diverse. Therefore, it is very important to package and protect electronic devices. At present, with the development of electronic components towards smaller, lighter and faster trends, their integration level has also increased sharply, which is accompanied by a substantial increase in the heat generation of chips, which in turn leads to a decrease in their lifespan. Since the heat generated by the chip cannot be conducted out in time in ultra-high integrated circuits, the mismatch between the coefficients...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C22C21/00C22C1/10C22C32/00
CPCC22C1/1036C22C21/00C22C32/0068C22C1/1047
Inventor 周畅武高辉周勇孝修子扬杨文澍
Owner HARBIN INST OF TECH
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