Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Roughening liquid for silicon chip

A silicon wafer, electronic-grade technology, applied in the field of electronic chemicals, to achieve the effect of ensuring the ratio of additives and improving the surface effect

Active Publication Date: 2019-04-12
湖北兴福电子材料股份有限公司
View PDF3 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention aims at the shortage of silicon chip mechanical roughening and chemical corrosion liquid in the existing semiconductor integrated circuit technology, and aims at providing a kind of roughening liquid which reduces the loss of silicon chip and regulates the surface roughness of silicon chip and its preparation method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] A silicon chip hair removal solution is prepared by the following method:

[0024] (1) The mass percentage of each raw material is: 3% ammonium bifluoride, 40% nitric acid, 30% sulfuric acid, 2% ammonium persulfate, 2% acetic acid and 23% ultrapure water.

[0025] (2) Weigh ultrapure water and place it in a container, slowly add electronic grade sulfuric acid with a mass concentration of 98% into the ultrapure water, and mix well.

[0026] (3) After the solution is cooled, add electronic-grade nitric acid with a mass concentration of 70%, electronic-grade acetic acid with a mass concentration of 99.8%, ammonium bifluoride, and ammonium persulfate to the solution in sequence, and mix well to obtain the hair removal solution 1.

[0027] The p-type silicon wafer was roughened by using the roughening liquid 1 under the experimental conditions of 25° C. and rotary spraying, and the experimental time was 10 s. The silicon wafer was cleaned and tested after roughening. The te...

Embodiment 2

[0029] A silicon chip hair removal solution is prepared by the following method:

[0030] (1) The mass percentage of each raw material is: 5% ammonium bifluoride, 30% nitric acid, 40% sulfuric acid, 3% ammonium persulfate, 4% acetic acid and 18% ultrapure water.

[0031] (2) Weigh ultrapure water and place it in a container, slowly add electronic grade sulfuric acid with a mass concentration of 98% into the ultrapure water, and mix well.

[0032] (3) After the solution is cooled, add electronic-grade nitric acid with a mass concentration of 70%, electronic-grade acetic acid with a mass concentration of 99.8%, ammonium bifluoride, and ammonium persulfate to the solution in sequence, and mix well to obtain the hair removal solution 2.

[0033] The p-type silicon wafer was roughened by using the roughening liquid 2 under the experimental conditions of 25° C. and rotary spraying, and the experimental time was 10 s. After roughening the silicon wafer, it was cleaned and tested. Th...

Embodiment 3

[0035] A silicon chip hair removal solution is prepared by the following method:

[0036] (1) The mass percentage of each raw material is: 3% ammonium bifluoride, 30% nitric acid, 40% sulfuric acid, 4% ammonium persulfate, 5% acetic acid and 18% ultrapure water.

[0037] (2) Weigh ultrapure water and place it in a container, slowly add electronic grade sulfuric acid with a mass concentration of 98% into the ultrapure water, and mix well.

[0038] (3) After the solution is cooled, add electronic-grade nitric acid with a mass concentration of 70%, electronic-grade acetic acid with a mass concentration of 99.8%, ammonium bifluoride, and ammonium persulfate to the solution in sequence, and mix well to obtain the hair removal solution 3.

[0039] The N-type silicon wafer was roughened under the experimental conditions of 25° C. and rotary spraying using the roughening liquid 3 for 10 seconds. After roughening the silicon wafer, it was cleaned and tested. The test results showed th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Surface roughnessaaaaaaaaaa
Surface roughnessaaaaaaaaaa
Surface roughnessaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the field of electronic chemicals, and specifically relates to a roughening liquid for a silicon chip. The roughening liquid for the silicon chip is mainly used for treating the surface of the silicon chip, so that the silicon chip can achieve a certain roughness. The roughening liquid comprises the following components by weight: 1 to 15% of ammonium bifluoride, 20 to 50%of nitric acid, 30 to 60% of inorganic acid, 1 to 5% of ammonium persulfate, 1 to 5% of acetic acid and 15 to 26 wt% of water. According to the invention, the surface roughness and defects of the silicon chip are important indicators; the degree of roughness and the number of defects of the silicon chip affect performing of a subsequent process of roughening to the silicon chip; and by utilization of the roughening liquid for chemical corrosion of the silicon chip, the silicon chip can obtain a required surface roughness and can avoid surface defects and silicon chip loss in the process of mechanical roughening.

Description

technical field [0001] The invention belongs to the field of electronic chemicals, and in particular relates to a silicon wafer dehairing liquid and a preparation method thereof. Background technique [0002] Thinning and roughening of silicon wafers is an important process in the manufacture and packaging of semiconductor integrated circuits. The manufacturing process of integrated circuits occurs at tens of nanometers to several microns on the surface of silicon wafers. According to different process requirements, it is necessary to Or carry out thinning and roughening treatment on the front. [0003] In the integrated circuit manufacturing process, some processes require the completed silicon wafers to be stacked together for circuit connection. At this time, the back of the silicon wafer must be thinned and roughened, and the surface must have very good flatness and very little The surface lattice defects enable the silicon wafers to fit together perfectly for the next ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C09K13/08H01L21/306
CPCC09K13/08H01L21/30604
Inventor 李少平尹印贺兆波张庭冯凯万杨阳王书萍
Owner 湖北兴福电子材料股份有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com