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A process for preparing a novel inorganic high-resistance layer used for a ZnO piezoresistor

A piezoresistor and preparation technology, which is applied in the field of non-linear resistance sheet manufacturing and high resistance layer, to achieve stable process and reduce the fluctuation of glaze layer thickness

Inactive Publication Date: 2019-04-02
TSINGHUA UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0015] The technical problem to be solved in the present invention: in the formulation of the megavolt resistor, through the adjustment of the formula of the high-resistance layer and the control of the process, the shrinkage ratio of the body of the resistor and the glaze layer can be matched, which not only solves the side insulation problem of the resistor , while improving the square wave current capacity of the resistor

Method used

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  • A process for preparing a novel inorganic high-resistance layer used for a ZnO piezoresistor
  • A process for preparing a novel inorganic high-resistance layer used for a ZnO piezoresistor

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Embodiment 1

[0040] Select the D5 specification resistor, and match the high resistance layer in the following way: 30% zinc oxide, 10% bismuth oxide, 5% antimony oxide, 5% manganese oxide, 5% tin dioxide, 0.3% chromium oxide, PVA (polyvinyl alcohol ) 2.5%, deionized water 42.2%. The prepared raw materials are mixed and heated to dissolve to make a uniform solution, and are directly coated on the side of the resistor sheet after the resistor sheet is formed.

[0041] The following is a detailed description of the specific formula-level production process.

[0042] After the zinc oxide valve plate is prepared by raw materials, mixed by ball milling, spray-dried and pressed into shape:

[0043] 1) Sintering

[0044] Use a high-temperature electric furnace to sinter the green body in a closed atmosphere. The specific temperature and control time are as follows:

[0045] From room temperature to 400°C, the heating time is 10-15 hours;

[0046] Keep low temperature debinding at 280°C for 5 ho...

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Abstract

A process for preparing a novel inorganic high-resistance layer used for a ZnO piezoresistor is provided. The process includes subjecting prepared raw materials to mixing and heating for dissolution to prepare a uniform solution, and directly coating a side surface of a resistor sheet after the resistor sheet is molded. The process is characterized in that the process includes a raw material preparing step, a ball milling mixing step, a spray drying step, a compression moulding step, a sintering step, a coating step, and a sheet formation step; and the raw material preparing step, the ball milling mixing step, the spray drying step, the compression moulding step, the sintering step, and the coating step are performed in order. Beneficial effects of the process are that a high-resistance layer is formed after molding so that fluctuation in glaze layer thickness caused by nonuniform presintering shrinking percentages is reduced and the process is stabler.

Description

technical field [0001] The invention relates to the field of resistor sheet preparation technology, in particular to a new method for a high-resistance layer in the manufacturing process of a nonlinear resistor sheet. Background technique [0002] The ZnO resistor is the core component of the ZnO arrester, so it is a key component that determines the performance of the arrester. In the national standard, the surge arresters whose nominal discharge currents are 5kA and 10kA respectively are required to reach 65kA and 100kA for their ability to withstand two 4 / 10μs high-current shocks. Foreign patent research chooses SiO 2 Fe 2 o 3 System formula, but the ability of D3 and D4 resistors to withstand high current impact can only reach about 60kA and 80kA respectively, which is still a certain distance from the requirements of 65kA and 100kA respectively. Improving the high-current capability of ZnO resistors is a common problem among domestic counterparts. The technical diff...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/453C04B35/622C04B41/87H01C17/06
CPCC04B35/453C04B35/62222C04B41/009C04B41/505C04B41/87C04B2235/3241C04B2235/3267C04B2235/3293C04B2235/3294C04B2235/3298C04B2235/6562C04B2235/6565C04B2235/6567H01C17/06C04B41/5027C04B41/5049C04B41/5033C04B41/4539C04B41/0072
Inventor 何金良孟鹏飞胡军谢清云蒙小记胡小定李刚
Owner TSINGHUA UNIV
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