Preparation method of garnet crystal film based on He ion irradiation

Abstract

The invention discloses a preparation method of a garnet crystal film based on He ion irradiation. The preparation method comprises the following steps: a) computing to obtain energy and dosage of Heion; b) performing irradiation on the garnet crystal according to the computed energy and dosage of the He ion, wherein a damaged layer divides the garnet crystal into a surface layer of an upper endand a substrate layer of a lower end; c) cleanly washing the irradiated garnet crystal and substrate material; d) fixing the substrate layer and substrate material of the garnet crystal, and mutuallyextruding together; and e) performing annealing treatment on the fixed garnet crystal and substrate material to obtain the garnet crystal film. The garnet crystal film manufactured by combining the Heion irradiation with the bonding technology is high in quality, and the free selection of the substrate material is realized.

Description

Technical field [0001] The invention relates to the technical field of optoelectronic device manufacturing, in particular to a method for preparing a garnet crystal film based on He ion irradiation. Background technique [0002] Garnet crystal is an important matrix crystal of solid-state lasers. As a high-power laser material, it has formed a huge series, mainly including: Yttrium aluminum garnet (Y 3 Al 5 O 12 , YAG) crystal, yttrium gallium garnet (Y 3 Ga 5 O 12 , YGG) crystal, gadolinium gallium garnet (Gd 3 Ga 5 O 12 , GGG) etc. As an important laser crystal, rare earth-doped garnet crystal has been extensively studied. The most representative and most studied is YAG crystal. Currently, Nd:YAG lasers have been commercialized. In the tunable laser crystal, chromium-doped ytterbium holmium yttrium aluminum gallium garnet (Cr, Yb, Ho: YAGG), its wavelength is continuously adjustable between 2.84 and 3.05μm. According to statistics, most of the missile infrared homing heads use...

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Problems solved by technology

[0005] The existing methods for preparing garnet crystal thin films are mainly deposition and sputtering. The preparation of amorphous thin films has the advantages of mature technology, but cannot prepare high-quality crystal thin films; molecular beam epitaxy can prepare higher-quality crystal thin films, but The requirements for the substrate are relatively strict, lattice matching is required, and the substrate cannot be freely selected

The article published by Shimoda et al. (Opti. Commun. 194, 2001, 175-179) introduces a method of preparing Yb-doped YAG crystal thin film by pulsed laser deposition method. This method has extremely strict requirements on the substrate. The article The substrate selected in this paper is a doped YAG crystal, the lattice constants are almost perfectly matched, and the substrate cannot be freely selected.