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One-step preparation method of two-dimensional aminated boron nitride

A boron nitride and amination technology, applied in chemical instruments and methods, nitrogen compounds, inorganic chemistry, etc., can solve the problems of limited application fields of boron nitride, lack of active groups, poor dispersibility, etc., and achieve easy industrialized mass production. , the preparation is simple, the effect of improving the dispersion performance

Inactive Publication Date: 2019-03-08
YANCHENG TEACHERS UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, boron nitride has stable chemical properties and lacks active groups on the surface, so its dispersion in solvents is poor, which greatly limits the application fields of boron nitride.

Method used

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  • One-step preparation method of two-dimensional aminated boron nitride
  • One-step preparation method of two-dimensional aminated boron nitride
  • One-step preparation method of two-dimensional aminated boron nitride

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] (1) Put 4.73g of sodium amide and 3.5g of boron oxide into the autoclave, and raise it from room temperature to 600°C at a rate of 10°C / min.

[0025] (2) Maintain at 600°C for 6h.

[0026] (3) After washing the product with concentrated hydrochloric acid and deionized water, put it into a vacuum oven and heat it to 60° C. for 4 hours.

[0027] (4) Mix the trigonal boron nitride powder and urea with a mass ratio of 1:40, put it into a ball mill jar, and flush it with nitrogen gas as a protective gas.

[0028] (5) Ball milling at room temperature for 20 h at a rotational speed of 700 r / min to obtain two-dimensional aminated boron nitride.

[0029] image 3 The transmission electron micrographs of the two-dimensional amidated boron nitride prepared in this embodiment are included.

Embodiment 2

[0031] (1) Put 4.73g of sodium amide and 3.5g of boron oxide into the autoclave, and raise it from room temperature to 600°C at a rate of 10°C / min.

[0032] (2) Maintain at 600°C for 8 hours.

[0033] (3) After washing the product with concentrated hydrochloric acid and deionized water, put it into a vacuum oven and heat it to 60° C. for 4 hours.

[0034] (4) Mix the trigonal boron nitride powder and urea with a mass ratio of 1:40, put it into a ball mill jar, and flush it with nitrogen gas as a protective gas.

[0035] (5) Ball milling at room temperature for 20 h at a rotational speed of 700 r / min to obtain two-dimensional aminated boron nitride.

Embodiment 3

[0037] (1) Put 4.73g of sodium amide and 3.5g of boron oxide into the autoclave, and raise it from room temperature to 600°C at a rate of 10°C / min.

[0038] (2) Maintain at 600°C for 6h.

[0039] (3) After washing the product with concentrated hydrochloric acid and deionized water, put it into a vacuum oven and heat it to 80° C. for 4 hours.

[0040] (4) Mix the trigonal boron nitride powder and urea with a mass ratio of 1:40, put it into a ball mill jar, and flush it with nitrogen gas as a protective gas.

[0041] (5) Ball milling at room temperature for 20 h at a rotational speed of 700 r / min to obtain two-dimensional aminated boron nitride.

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Abstract

The invention provides a one-step preparation method of two-dimensional aminated boron nitride. The method comprises the following steps: taking sodium amide and boron oxide as reaction precursors andcarrying out heating reaction to obtain rhombohedral boron nitride; mixing rhombohedral boron nitride powder with urea and then putting a mixture into a ball-milling tank; introducing nitrogen gas asprotective gas and carrying out ball milling at normal temperature to obtain the two-dimensional aminated boron nitride. The urea in the method disclosed by the invention has the advantages that thestripping is benefited; boron nitride nanosheets are protected and extensive formation of excessive mechanical damage and lattice defect of the boron nitride nanosheets is prevented; lamellas of two-dimensional boron nitride nanosheets arrayed in an ABC mode and prepared by stripping the rhombohedral boron nitride are easier to strip; by modifying amino on the surface of the boron nitride, the dispersion performance of the boron nitride in a solution can be greatly improved; the one-step preparation method has the characteristics of simple preparation, low cost and easiness in industrial massproduction.

Description

technical field [0001] The invention relates to the field of preparation of two-dimensional functionalized boron nitride, in particular to a method for preparing two-dimensional aminated boron nitride nanosheets by one-step ball milling of trigonal boron nitride. Background technique [0002] Trigonal boron nitride has high chemical stability, the anti-oxidation temperature in the air is close to 900°C, has high resistivity, and the luminous position is in the ultraviolet band. It can be used as an excellent high-temperature refractory material, insulating film of electronic devices, ultraviolet or Deep ultraviolet luminescent materials also have broad application prospects in high temperature, high power, high speed semiconductor devices and heat sink materials. [0003] Hexagonal boron nitride, each layer is composed of B atoms and N atoms according to sp 2 Infinitely extending hexagons composed of alternately hybridized arrangements, these atomic layers are arranged in t...

Claims

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Application Information

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IPC IPC(8): C01B21/064B82Y30/00B82Y40/00
CPCC01B21/0646B82Y30/00B82Y40/00C01P2004/04C01P2004/62
Inventor 苗中正张立云苗爱民
Owner YANCHENG TEACHERS UNIV
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