Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing silicon carbide chemical mechanical polishing solution with improved pH stability

A chemical mechanical and silicon carbide technology, which is applied in the direction of polishing compositions containing abrasives, can solve the problems of uncontrolled pH value, low silicon carbide polishing efficiency, and low abrasive hardness, so as to reduce hard agglomeration and enhance uniform dispersion Sexuality and stability, dispersion stability uniform dispersion effect

Active Publication Date: 2019-02-12
SICC CO LTD
View PDF4 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The CMP polishing liquid of ASAHI GLASS company uses potassium permanganate as the oxidizing agent and acidic silicon oxide or cerium oxide as the abrasive. During the use of the polishing liquid, the pH value cannot be controlled, and the abrasive hardness is low. Therefore, the CMP polishing liquid of ASAHI GLASS company The polishing efficiency of silicon carbide is low

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing silicon carbide chemical mechanical polishing solution with improved pH stability
  • Method for preparing silicon carbide chemical mechanical polishing solution with improved pH stability
  • Method for preparing silicon carbide chemical mechanical polishing solution with improved pH stability

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] Embodiment 1: Preparation method of silicon carbide chemical mechanical polishing fluid with stable pH value

[0056] A preparation method of a silicon carbide chemical mechanical polishing fluid with stable pH value, the preparation method comprising the following steps:

[0057] (1) Provide an acidic alumina dispersion: disperse 15 grams of alumina powder with a particle size of 100 nm in 100 ml of water, adjust the pH value to 0 to 1 with nitric acid, and grind for 4 to 6 hours with a star ball mill to obtain Acidic alumina dispersion with a pH value of 3.5;

[0058] (2) Surface modification: Add 0.5% of surface modifier organic acid (based on the weight of alumina) to 100ml of the above-mentioned acidic alumina dispersion, and continue to disperse with a ball mill to obtain a surface-modified acidic alumina dispersion;

[0059] (3) Dilute the surface-modified alumina dispersion to 0.5-2%, add nitric acid to adjust the pH to 3.5-4, add 0.05% of a pH stabilizer alumi...

Embodiment 2

[0061] Embodiment 2: Preparation method of silicon carbide chemical mechanical polishing fluid with stable pH value

[0062] A preparation method of a silicon carbide chemical mechanical polishing fluid with stable pH value, the preparation method comprising the following steps:

[0063] (1) Provide an acidic alumina dispersion: disperse 25 grams of alumina powder with a particle size of 100 nm in 100 ml of water, adjust the pH value to 0 to 1 with nitric acid, and grind for 4 to 6 hours with a star ball mill to obtain Acidic alumina dispersion with a pH value of 4.0;

[0064] (2) Surface modification: Add 2.0% of surface modifier organic acid (based on the weight of alumina) to 100ml of the above-mentioned acidic alumina dispersion, and continue to disperse with a ball mill to obtain a surface-modified acidic alumina dispersion;

[0065] (3) Dilute the surface-modified alumina dispersion to 0.5-2%, add nitric acid to adjust the pH to 3.5-4, add 1.0% of pH stabilizer aluminum...

Embodiment 3

[0067] Embodiment 3: Preparation method of silicon carbide chemical mechanical polishing fluid with stable pH value

[0068] A preparation method of a silicon carbide chemical mechanical polishing fluid with stable pH value, the preparation method comprising the following steps:

[0069] (1) Provide an acidic alumina dispersion: disperse 20 grams of alumina powder with a particle size of 100 nm in 100 ml of water, adjust the pH value to 0 to 1 with nitric acid, and grind for 4 to 6 hours with a star ball mill to obtain Acidic alumina dispersion with a pH value of 3.8;

[0070] (2) Surface modification: Add 1.0% of surface modifier organic acid (based on the weight of alumina) to 100ml of the above-mentioned acidic alumina dispersion, and continue to disperse with a ball mill to obtain a surface-modified acidic alumina dispersion;

[0071] (3) Dilute the surface-modified alumina dispersion to 0.5-2%, add nitric acid to adjust the pH to 3.5-4, add 0.08% of pH stabilizer aluminu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
particle diameteraaaaaaaaaa
Mohs hardnessaaaaaaaaaa
Login to View More

Abstract

The invention provides a method for preparing a silicon carbide chemical mechanical polishing solution with improved pH stability. The preparation method comprises the following steps: performing surface modification on a high-hardness grinding material dispersion solution by using a surface modifier, and successively adding a pH stabilizer and an oxidant, wherein the surface modifier is organic acid. The stability of the pH value of the polishing solution can be well kept in the chemical mechanical polishing process, and the polishing solution is good in dispersion stability and uniform in dispersion. Since the pH stabilizer is added into the preparation method of the polishing solution, the pH value stability of the polishing solution in the chemical mechanical polishing process is higher, the organic acid surface modifier in the polishing solution is used for performing the surface modification on the high-hardness grinding material dispersion solution, so that the polishing solution is unlikely to have hard agglomeration. The polishing solution of the invention is pollution-free to the environment, and can be used in a circular feeding way.

Description

technical field [0001] The invention relates to the technical field of chemical mechanical polishing, in particular to a method for preparing a silicon carbide chemical mechanical polishing liquid with improved pH stability. Background technique [0002] Due to the high hardness (9.5) and strong chemical inertness of silicon carbide, the polishing speed of alkaline hydrogen peroxide-silicon oxide CMP polishing fluid is very low (<50nm / hr), for two reasons: one is the hardness of silicon oxide Small (6-7); Second, the chemical action of the oxidizing agent is weak under alkaline conditions. Therefore, the use of α-Al whose hardness is second only to silicon carbide 2 o 3 The acidic (pH<7, especially pH<4) silicon carbide chemical mechanical polishing fluid of the abrasive has become the mainstream. [0003] In order to improve chemical oxidation, potassium permanganate has become the most widely used oxidant, but potassium permanganate will consume H during the ox...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 窦文涛宗艳民梁庆瑞王含冠其他发明人请求不公开姓名
Owner SICC CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com