A high-quality semi-insulating silicon carbide single crystal and substrate doped with a small amount of vanadium

Abstract

The invention discloses high-quality semi-insulating silicon carbide single crystal doped with a small amount of vanadium and a silicon carbide single crystal substrate, and belongs to the field of semiconductor materials. The semi-insulating silicon carbide single crystal comprises shallow energy level impurities, a low-concentration deep energy level dopant and a very small amount of intrinsic point defects, wherein the shallow energy level impurities are compensated by the deep energy level dopant and the intrinsic point defects together, the concentration of the deep energy level dopant issmaller than that of the deep energy level dopant in the doped semi-insulating silicon carbide single crystal, and the concentration of the intrinsic point defects is the primary concentration of theintrinsic point defects in the silicon carbide single crystal at room temperature; and the stability of the electrical properties of the silicon carbide single crystal is not affected by the concentration of the intrinsic point defects. The semi-insulating silicon carbide single crystal has highly stable resistivity and high resistivity uniformity, and the silicon carbide single crystal substrateprepared from the silicon carbide single crystal has high resistivity uniformity and low stress, so that the silicon carbide single crystal substrate has excellent surface quality, and the stabilityand consistency of subsequent epitaxial quality are ensured.

Description

technical field [0001] The application relates to a high-quality semi-insulating silicon carbide single crystal and substrate doped with a small amount of vanadium, belonging to the field of semiconductor materials. Background technique [0002] Semi-insulating silicon carbide (SiC) single crystal substrate has become the preferred semiconductor material for GaN-based high-frequency microwave devices due to its excellent physical properties such as large band gap, high resistivity and thermal conductivity, and strong breakdown field. With the continuous development of 5G technology, the demand for semi-insulating silicon carbide single crystal substrates on the market side continues to expand. More importantly, batch commercial applications have also put forward higher quality requirements for silicon carbide semi-insulating single crystal substrates. high demands. [0003] The semi-insulating silicon carbide single crystal that has been industrialized at present is based o...

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Problems solved by technology

However, the intrinsic point defect has a high migration rate in the crystal, and at a certain temperature (such as the temperature condition of GaN epitaxial layer preparation), migration, diffusion and annihilation will occur, which will cause the instability of the substrate resistivity, Also affect the stability of device performance

[0005] The vanadium concentration [V] in doped semi-insulating silicon carbide single crystal is usually 1×10 17 ~1×10 18 cm -3 , corresponding to a nitrogen concentration [N] higher than 10 17 cm -3 The high-concentration vanadium doping in the preparation process has high technical barriers, and it is easy to form a large number of defects and uncontrollable shallow energy level impurity concentration in the prepared crystal, resulting in uncontrollable crystal quality

[N] in high-purity semi-insulating silicon carbide single crystal is 10 15 cm -3 order of magnitude, the corresponding point defect concentration is 1×10 15 cm -3 Level and above, the removal of shallow energy level impurities such as nitrogen in the preparation process requires high technical and capital costs

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