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Measure sio using equivalent physical structure model 2 Film Thickness Method

A technology of physical structure and film thickness, applied in the direction of measuring devices, optical devices, instruments, etc., can solve problems affecting the accuracy of film thickness evaluation results, achieve traceability, improve unification and standardization, and ensure accuracy Effect

Active Publication Date: 2020-01-17
SHANGHAI INST OF MEASUREMENT & TESTING TECH +1
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  • Application Information

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Problems solved by technology

In practical applications, different processing methods and different measurement principles will affect the accuracy of film thickness evaluation results

Method used

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  • Measure sio using equivalent physical structure model <sub>2</sub> Film Thickness Method
  • Measure sio using equivalent physical structure model <sub>2</sub> Film Thickness Method
  • Measure sio using equivalent physical structure model <sub>2</sub> Film Thickness Method

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Embodiment Construction

[0029] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0030] According to attached Figure 1~4 , the present invention is a kind of adopting equivalent physical structure model to measure SiO 2 The film thickness method for measuring SiO 2 The method of film thickness is based on the ellipsometry using micro-nano film thickness standard samples (i.e. SiO 2 Film thickness standard sample) combined with the equivalent physical structure model to measure SiO 2 film thickness, the equivalent physical structure model is based on the SiO 2 The simplified equivalent physical structure model established by the actual multilayer film physical structure model of the thin film, the sequence includes the rough surface layer 3, SiO 2 Thin film layer 1, intermediate mixed layer 4 and Si base layer 2, wherein said intermediate mixed layer 4 is Si base layer and SiO 2 Si produced by the reaction between thin...

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Abstract

The invention provides a method for measuring a thickness of a SiO2 film by using an equivalent physical structure model. The method for measuring the thickness of the SiO2 film is characterized by comprising the step of measuring the thickness of the Si / SiO2 film based on an ellipsometry by using a mciro-nano film thickness standard sample in combination with the equivalent physical structure model, wherein the equivalent physical structure model is a simplified equivalent physical structure model established according to an actual multi-layer film physical structure model of the Si / SiO2 film, the actual multi-layer film physical structure model sequentially includes a surface roughness layer, an SiO2 film layer, an intermediate mixing layer and an Si substrate, and the intermediate mixing layer is an SixO product film layer generated by reaction of the Si substrate and the SiO2 film layer. According to the method for measuring the thickness of the SiO2 film by using the equivalent physical structure model, the uniformity of the film physical structure model established based on ellipsometers of different manufacturers and models and the consistency of results can be guaranteed, and a basis is laid for establishment and improvement of a micro-nano film quantity value traceability system.

Description

technical field [0001] The present invention relates to an equivalent model substitution method for thin film thickness measurement, and in particular discloses a method for measuring SiO2 using an equivalent physical structure model. 2 The method of film thickness, according to the measurement and traceability requirements of micro-nano film thickness standard samples, simplifies the modeling steps, and realizes the standardization of the physical structure models of different manufacturers and brands of ellipsometers in the same material film structure, which is used for calibration Ellipsometric optical film measuring instrument. Background technique [0002] With the continuous innovation of science and technology, the rapid development of semiconductor industry, precision engineering industry, nanosystem technology (NEMS) and nanomaterial science, the demand for high-precision and accurate quantitative measurement of micro-nano structures is becoming more and more urgen...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01B11/06
CPCG01B11/0641
Inventor 雷李华李源蔡潇雨魏佳斯王道档傅云霞孟凡娇孔明张馨尹
Owner SHANGHAI INST OF MEASUREMENT & TESTING TECH
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