Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Shield gate power device

A technology of power devices and shielding grids, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of device cell density and current capacity limitations, achieve industrial production, improve cell density and current capacity, and achieve low conductivity. The effect of on-resistance

Inactive Publication Date: 2019-01-08
UNIV OF ELECTRONIC SCI & TECH OF CHINA
View PDF3 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in order to improve the reliability of the lower oxide layer and reduce the output capacitance to ensure that it has a certain withstand voltage capability, the insulating dielectric layer around the lower polycrystalline "body field plate" is generally thicker, due to the high depth and width of etching and filling The specific trench will be limited by the process conditions, and the width of the lower polysilicon field plate cannot be very small, which makes the further reduction of the cell size limited by the process conditions and the reliability of the device dielectric layer, so that the cell density of the device and current capability is limited

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Shield gate power device
  • Shield gate power device
  • Shield gate power device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] This embodiment provides a figure 1 The shielded gate power device shown includes a metallized drain 1, a first conductivity type semiconductor heavily doped substrate 2, a first conductivity type semiconductor drift region 3 and a metallization source 11 stacked sequentially from bottom to top; The upper layer of the first conductivity type semiconductor drift region 3 has a second conductivity type semiconductor body region 4; the upper layer of the second conductivity type semiconductor body region 4 has a second conductivity type semiconductor heavily doped contact region 5 and contacts with it The heavily doped source region 6 of the semiconductor of the first conductivity type has a first groove gate structure or a second groove gate structure with a depth smaller than the first groove gate structure between adjacent second conductivity type semiconductor body regions 4, the first groove gate structure structure and the second groove gate structure are alternately...

Embodiment 2

[0024] The difference between this embodiment of the present invention and Embodiment 1 is that there are multiple second groove gate structures between any two adjacent first groove gate structures, such as image 3 shown. Same as the first embodiment, the lateral width of the control gate electrode 71 is greater than the lateral width of the trench gate electrode 72 .

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the technical field of power semiconductors, the invention aims at the problems that the cell density and the current capability of the conventional shielded gate power deviceare limited, A mask gate power device By arranging one or more TMOS cell structures between the conventional shielded gate cell structures, the channel density is increased under the same chip area,so that the cell density and current capability of the shielded gate MOS are improved while the gate drain capacitance is lower, the breakdown voltage is higher, and the on-resistance is lower.

Description

technical field [0001] The invention belongs to the technical field of power semiconductors, and in particular relates to a shielded gate power device. Background technique [0002] Power semiconductor devices are semiconductor devices for power processing, which combine microelectronics technology and power electronics technology to form the basis and core of power electronics technology. Power DMOS plays an important role in the field of power conversion because of its advantages such as fast switching speed, low loss, high input impedance, low driving power, and good frequency characteristics. Its development process is a process of continuously improving withstand voltage and reducing loss on the basis of maintaining its own advantages. The traditional VDMOS device is a planar structure using a double-diffusion process. It is the first power MOSFET successfully commercially applied and has played a key role in promoting the development of power MOSFETs. However, the exi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L29/78H01L29/423
CPCH01L29/7813H01L29/4236H01L29/7831
Inventor 高巍何文静任敏蔡少峰李泽宏张金平张波
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com