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Epitaxial structure and preparation method of group III nitride compound with non-polar face

A non-polar surface, epitaxial structure technology, used in semiconductor devices, electrical components, circuits, etc.

Active Publication Date: 2020-04-07
ELEC TECH OPTOELECTRONICS TECHWUHUCO
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Based on this, it is necessary to provide a non-polar surface group III nitride epitaxial structure and its preparation method for the quality problems caused by the lattice mismatch of the non-polar group III nitride epitaxial structure

Method used

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  • Epitaxial structure and preparation method of group III nitride compound with non-polar face
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  • Epitaxial structure and preparation method of group III nitride compound with non-polar face

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preparation example Construction

[0049] The embodiment of the present invention also provides a method for preparing a group III nitride epitaxial structure on a non-polar surface, comprising the following steps:

[0050] S10, growing the nucleation layer 2 epitaxially on the non-polar surface of the substrate 1;

[0051] S20, epitaxially growing a first non-polar group III nitride layer 3 on the nucleation layer 2;

[0052] S30, covering the patterned mask layer 4 on the first non-polar group III nitride layer 3;

[0053] S40, etching down to the substrate 1 through the patterned mask layer 4 to form a plurality of primary epitaxial columnar structures spaced apart from each other; and

[0054] S50 , epitaxially growing the second non-polar group III nitride layer 7 on the surface of the patterned mask layer 4 to obtain a plurality of secondary epitaxial columnar structures spaced apart from each other. 7.

[0055] The preparation method of the present invention forms the nucleation layer 2 and the first ...

Embodiment 1

[0069] Using MOCVD in An aluminum nitride (AlN) nucleation layer 2 is grown on the r-plane sapphire substrate 1, and the thickness of the AlN nucleation layer 2 is 150 nm;

[0070] Epitaxial growth on the AlN nucleation layer 2 by MOCVD The first non-polar surface aluminum nitride layer on the non-polar surface (the first non-polar surface Group III nitride layer 3), the thickness of the first non-polar surface aluminum nitride layer is 3.5 mm;

[0071] Using PECVD to grow 300nm SiO on the first non-polar surface aluminum nitride layer 2 mask layer 4, the SiO 2 The thickness of the mask layer 4 is 80nm;

[0072] Use a coater to coat the photoresist evenly on the SiO at a speed of 4000rpm 2 A photoresist layer 5 is formed on the mask layer 4;

[0073] disposing the mask plate on the photoresist layer 5, and irradiating with ultraviolet light to remove the photoresist irradiated by ultraviolet light, and the wavelength range of ultraviolet light is 280nm-190nm;

[0074] ...

Embodiment 2

[0078] Using MBE in growing a gallium nitride nucleation layer 2 on the r-plane sapphire substrate 1, the thickness of the gallium nitride nucleation layer 2 being 40 nm;

[0079] Using MOCVD to epitaxially grow on the GaN nucleation layer 2 The first non-polar surface gallium nitride layer on the non-polar surface (the first non-polar surface Group III nitride layer 3), the thickness of the first non-polar surface gallium nitride layer is 4 mm;

[0080] Using PECVD to grow 300nm SiO on the first non-polar surface gallium nitride layer 2 mask layer 4, the SiO 2 The thickness of the mask layer 4 is 90nm;

[0081] Use a coater to coat the photoresist evenly on the SiO at a speed of 4000rpm 2 A photoresist layer 5 is formed on the mask layer 4;

[0082] disposing the mask plate on the photoresist layer 5, and irradiating with ultraviolet light to remove the photoresist irradiated by ultraviolet light, the wavelength range of ultraviolet light is 400nm-315nm;

[0083] For ...

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Abstract

An epitaxial structure with non-polar surface group III nitride is disclosed, which includes a substrate and a plurality of spaced secondary epitaxial columnar structures epitaxially grown on a non-polar surface of the substrate, the secondary epitaxial columnar structure comprises a nucleation layer, a first non-polar surface Group III nitride layer, a mask layer, and a second non-polar surface Group III nitride layer sequentially superposed in a direction perpendicular to the non-polar surface of the substrate, wherein the epitaxial growth surfaces of the first non-polar surface Group III nitride layer and the second non-polar surface Group III nitride layer are non-polar surfaces of the group III nitride. The invention also discloses a preparation method of a non-polar surface group IIInitride epitaxial structure.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a non-polar plane Group III nitride epitaxial structure and a preparation method thereof. Background technique [0002] Group III nitride semiconductor materials represented by gallium nitride (GaN) have great practical value in the preparation of high-efficiency light-emitting diodes (LEDs). At present, gallium nitride (GaN) is generally epitaxial on (001) plane sapphire substrates, however, the large lattice mismatch between sapphire substrates and gallium nitride (GaN) makes gallium nitride (GaN) materials suffer Severe internal stress produces a large piezoelectric field. In addition, gallium nitride (GaN) itself suffers from a certain spontaneous polarization effect due to its special crystal structure (wurtzite structure). The combined effect of the two can cause a relatively strong built-in electric field, which greatly reduces the recombination efficiency of elec...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/02H01L33/32
CPCH01L33/0075H01L33/02H01L33/32
Inventor 邢琨陈刚毅王江涛
Owner ELEC TECH OPTOELECTRONICS TECHWUHUCO
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