Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing resistive gas electron multiplier film and resistive gas electron multiplier film

A technology of gas electron multiplication and thin film, applied in the direction of instruments, circuits, discharge tubes, etc., can solve the problems of loss of resistive electrodes, low gain, no signal, etc., and achieve the effect of stable performance, excellent performance and low cost

Active Publication Date: 2019-01-04
UNIV OF SCI & TECH OF CHINA
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

More importantly, laser drilling will cause high temperature locally, which also leads to two serious problems: 1) Since high temperature can promote DLC graphitization, it will cause graphitization of nearby DLC at the edge of the hole, resulting in too low resistivity Lose the role of resistive electrode
2) High temperature can cause DLC in the air to react with oxygen to form carbon dioxide, so some DLC plated thinly on the edge of the hole will completely become carbon dioxide and volatilize, resulting in no signal because there is no electrode coverage around the hole and no voltage can be applied.
Therefore, the performance of the GEM detector produced by this scheme is unstable, the gain is very low, and it encounters difficulties in practical applications and cannot meet the actual detection needs.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing resistive gas electron multiplier film and resistive gas electron multiplier film
  • Method for preparing resistive gas electron multiplier film and resistive gas electron multiplier film
  • Method for preparing resistive gas electron multiplier film and resistive gas electron multiplier film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0067] GEM films were prepared by the following steps:

[0068] Step 1. Use Teer 650 magnetron sputtering equipment to deposit DLC with a thickness of 100nm on both the upper and lower surfaces of the APICAL substrate with a thickness of 50μm and a size of 15cm×15cm. The surface resistivity of DLC is about 50MΩ / □. Then plate copper with a thickness of 4.3 μm on the surface of the DLC;

[0069] Step 2. Within the range of 10cm×10cm in the central area of ​​the substrate obtained in step 1, use wet etching to etch the copper layer on the upper and lower surfaces of the substrate with a diameter of 70 μm and a pitch of 140 μm, arranged in a hexagonal array holes, so that the DLC under the copper layer is exposed in the area of ​​the hole array.

[0070] Step 3, taking the substrate obtained in step 2 out of the copper etching solution, washing it with water, and then putting it in an oven at 70°C for 2 hours to dry;

[0071] Step 4. Sandblasting the upper and lower surfaces of ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The present invention provides a method for preparing a resistive gas electron multiplier film which can form a resistive gas electron multiplier film including a first diamond-like carbon layer, a polyimide-based film and a second diamond-like carbon layer stacked in this order and having a through-hole array. The method includes forming a through hole using a combination of a protective layer, asandblasting treatment, and wet etching. The resistive gas electron multiplier film containing diamond-like carbon layer formed by the method of the invention has few defects and stable performance.The invention also provides a gas electron multiplier film and a gas electron multiplier.

Description

technical field [0001] The invention relates to the field of microstructure gas detectors, in particular to a method for preparing a resistive gas electron multiplier film, a resistive gas electron multiplier film and a resistive electron multiplier. Background technique [0002] Gas Electron Multiplier (GEM, Gas Electron Multiplier) is a widely used detector in current Micro-Pattern Gaseous Detector (MPGD, Micro-Pattern Gaseous Detector). The body of the GEM detector is made of a GEM film. GEM films are usually provided with electrode layers on both sides of the polyimide film. Proposed electrode layers include copper layers, chrome layers, resistive polyimide-based thin film layers, and the like. For a GEM to function properly, an array of through holes needs to be formed in the GEM film. When electrons pass through the through hole under the action of an electric field, they collide with gas molecules and ionize to generate multiple secondary electrons, and the origina...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01J47/02G01N27/12
CPCG01N27/125H01J47/02
Inventor 周意王旭尚伦霖张广安鲁志斌刘建北张志永吕游邵明
Owner UNIV OF SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com