A kind of large-area molecular crystal and its preparation method

A molecular crystal and large-area technology, which is applied in crystal growth, chemical instruments and methods, semiconductor/solid-state device manufacturing, etc., can solve the problems of less research and difficult preparation of organic two-dimensional semiconductors, and achieve raw material saving, good repeatability, and The effect of high uniformity

Active Publication Date: 2020-09-25
INST OF CHEM CHINESE ACAD OF SCI
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Most of today's research focuses on inorganic materials such as boron nitride and transition metal chalcogenides. However, due to the difficulty of preparation, there are relatively few studies on organic two-dimensional semiconductors.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of large-area molecular crystal and its preparation method
  • A kind of large-area molecular crystal and its preparation method
  • A kind of large-area molecular crystal and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Example 1, Preparation and Characterization of CMUT Monolayer Molecular Crystals

[0040] The CMUT used in this embodiment is according to the literature (Wu, Q.et al.Dicyanomethylene-Substituted Fused Tetrathienoquinoid for High-Performance, Ambient-Stable, Solution-Processable n-Channel Organic Thin-Film Transistors.Chem.Mater.23,3138-3140 (2011)) method synthesis.

[0041] according to figure 1 As shown in the schematic diagram, a smaller-sized OTS hydrophobic substrate-modified oxide-doped silicon wafer is placed in a vessel at room temperature as a hydrophobic substrate, and an organic semiconductor with a volume concentration of 15 mg / mL is dripped on it. solution (the solvent is chlorobenzene), then cover it with an oxidation-doped silicon wafer whose size is slightly larger than that of the hydrophobic substrate as a hydrophilic substrate, and cover the vessel with a lid. After 12 hours, it was taken out, and a large-area organic semiconductor two-dimensional ...

Embodiment 2

[0045] Embodiment 2, device preparation

[0046] The CMUT organic semiconductor two-dimensional molecular crystal prepared in Example 1 was constructed into a field effect transistor by using a method of transferring a gold film by a mechanical probe.

[0047] Figure 5 a and Figure 5 b are the transfer characteristic curve and output characteristic curve of the field effect transistor with the CMUT two-dimensional molecular crystal structure, respectively. It can be seen that the mobility of the device can reach up to 2.8cm 2 V -1 the s -1 .

Embodiment 3

[0048] Example 3, Preparation and Characterization of HTEB Monolayer Molecular Crystals

[0049] The HTEB used in this embodiment is according to the literature (Meng, Q.et al.New Type of Organic Semiconductors for Field-Effect Transistors with Carbon-carbon Triple Bonds, Ambient-Stable, Solution-Processable n-Channel Organic Thin-FilmTransistors.J.Mater .Chem.19, 1477-1482 (2009)) method synthesis.

[0050] according to figure 1 As shown in the schematic diagram, a small BCB-modified oxide-doped silicon wafer is placed in a vessel at room temperature as a hydrophobic substrate, and an organic semiconductor solution with a volume concentration of 0.01 mg / mL is dripped on it. (the solvent is chlorobenzene), and then cover it with an oxidation-doped silicon wafer whose size is slightly larger than that of the hydrophobic substrate as a hydrophilic substrate, and cover the vessel lid. After 16 hours, it was taken out, and a large-area organic semiconductor two-dimensional molec...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a large-area molecular crystal and a preparation method thereof. The preparation method of the large-area molecular crystal comprises the following steps: placing an organic semiconductor solution on a hydrophobic substrate, covering the hydrophobic substrate with a hydrophilic substrate, and obtaining molecular crystals on the hydrophilic substrate through growth The solvent used in the organic semiconductor solution is at least one of chlorobenzene, chloroform, dichlorobenzene and xylene; the mass volume concentration of the organic semiconductor solution is 0.01mg / mL~15mg / mL; The solute of the semiconducting solution is an organic semiconducting molecule. The large-area molecular crystals provided by the present invention have the characteristics of large area, high uniformity and smooth surface, and field-effect transistors prepared from these large-area two-dimensional molecular crystals have higher carrier mobility and lower threshold voltage, It laid a solid foundation for the subsequent preparation of P-N heterojunction.

Description

technical field [0001] The invention relates to a large-area molecular crystal and a preparation method thereof, belonging to the technical field of organic semiconductor materials. Background technique [0002] Since the emergence of graphene, two-dimensional atomic crystals have attracted extensive attention. Most of the current research focuses on inorganic materials such as boron nitride and transition metal chalcogenides. However, due to the difficulty of preparation, there are relatively few studies on organic two-dimensional semiconductors. It is well known that large-area two-dimensional molecular crystals (2DMC) can construct high-performance transistors, which are expected to exceed the mobility of self-assembled monolayers bonded to substrates, which are generally lower than 0.05 cm 2 V -1 the s -1 . Large-area 2D transistors can reduce the bulk resistance and reduce the exposure of the semiconductor charge accumulation layer. This low defect density provides ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/54C30B19/00H01L51/05H01L51/30H01L51/42H01L51/46H01L51/50H01L51/54G01D5/26
CPCG01D5/26C30B19/00C30B29/54H10K85/00H10K10/46H10K30/00H10K50/00Y02E10/549
Inventor 江浪石燕君刘洁
Owner INST OF CHEM CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products