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Preparation method of poly(3-hexylthiophene)/self-doped defect-riched tin oxide heterojunction nano composite photocatalytic material

A photocatalytic material, a technology of hexylthiophene, is applied in the field of preparation of nanocomposite photocatalytic materials, which can solve the problems of insufficient reaction raw materials, obvious material agglomeration effect and friendliness, etc., and achieves excellent photocatalytic performance, simple process control and good plasticity. Effect

Inactive Publication Date: 2018-12-28
PINGDINGSHAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But monovalent SnO 2 The large forbidden band width makes it only able to absorb and utilize ultraviolet light to carry out photocatalytic reaction, and the energy of ultraviolet light accounts for less than 5% of the total energy of sunlight
These preparation methods have their unique advantages, but the disadvantages are that the reaction raw materials are not environmentally friendly, and the agglomeration effect of the prepared materials is obvious, etc.

Method used

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  • Preparation method of poly(3-hexylthiophene)/self-doped defect-riched tin oxide heterojunction nano composite photocatalytic material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] 1) Get 1mmol analytically pure stannous pyrophosphate (Sn 2 P 2 o 7 ) and 1.5mmol of acetic acid (CH 3 COOH) was fully dissolved in 5 mL of absolute ethanol, and then 0.5 mmol of alkyl dimethyl hydroxypropyl phospholipid betaine, 2 mmol of tea polyphenols and 13 mL of deionized water were added successively, and the whole process was maintained between sodium chloride and In the ice-salt bath of crushed ice, use a constant temperature magnetic stirring device to continuously magnetically stir it at a temperature of -20°C to obtain solution A;

[0028] 2) Transfer solution A to a polytetrafluoroethylene-lined hydrothermal kettle at a filling ratio of 70%, then put the hydrothermal kettle into a constant temperature oven at 100°C for 24 hours, after the hydrothermal reaction is completed, cool to room temperature to obtain Mixed solution B containing self-doped defect-rich tin oxide heterojunction;

[0029] 3) In the ice-salt bath of sodium chloride and crushed ice, u...

Embodiment 2

[0032] 1) Get 1mmol analytically pure stannous pyrophosphate (Sn 2 P 2 o 7 ) and 2.3mmol of acetic acid (CH 3 COOH) was fully dissolved in 12mL of absolute ethanol, and then 3mmol of alkyl dimethyl hydroxypropyl phospholipid betaine, 6mmol of tea polyphenols and 15mL of deionized water were added successively. In the ice-salt bath, use a constant temperature magnetic stirring device to continuously magnetically stir it at a temperature of -15°C to obtain solution A;

[0033] 2) Transfer the solution A to a polytetrafluoroethylene-lined hydrothermal kettle at a filling ratio of 60%, then put the hydrothermal kettle into a constant temperature oven and keep it warm at 140°C for 12h. After the hydrothermal reaction is completed, cool to room temperature to obtain Mixed solution B containing self-doped defect-rich tin oxide heterojunction;

[0034] 3) In the ice-salt bath of sodium chloride and crushed ice, use a constant temperature magnetic stirring device under the conditio...

Embodiment 3

[0038] 1) Get 1mmol analytically pure stannous pyrophosphate (Sn 2 P 2 o 7 ) and 3.6mmol of acetic acid (CH 3 COOH) was fully dissolved in 16mL of absolute ethanol, followed by adding 8mmol of alkyl dimethyl hydroxypropyl phospholipid betaine, 15mmol of tea polyphenols and 23mL of deionized water. In the ice-salt bath, use a constant temperature magnetic stirring device to continuously magnetically stir it at a temperature of -10°C to obtain solution A;

[0039] 2) Transfer solution A to a polytetrafluoroethylene-lined hydrothermal kettle at a filling ratio of 35%, and then put the hydrothermal kettle into a constant temperature oven at 180°C for 1 hour. After the hydrothermal reaction is completed, cool to room temperature to obtain Mixed solution B containing self-doped defect-rich tin oxide heterojunction;

[0040] 3) In the ice-salt bath of sodium chloride and crushed ice, use a constant temperature magnetic stirring device to carry out under the condition of continuou...

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Abstract

The invention discloses a preparation method of poly(3-hexylthiophene) / self-doped defect-riched tin oxide heterojunction nano composite photocatalytic material. According to the method, a nano composite material is obtained by loading and dispersing a self-doped defect-riched tin oxide heterojunction material in P3HT in the form of chemical bond complexation; wherein the self-doped defect-riched tin oxide is selected from Sn-doped non-stoichiometric or defect-riched tin oxide SnO2-x composed of mixed valence state of tin oxide; according to the invention, the visible light photocatalytic redoxproperties of self-doped defect-riched tin oxide, the electrical conductivity of poly(3-hexylthiophene), the catalytic capacity of visible light and a heterojunction structure with chemical bonding among different components are utilized to fully inhibit photo-generated electrons-hole recombination of the nano composite photocatalytic material in a photocatalytic reaction, so that the improvements on the performance of photocatalytic redox degradation of pollutants and photocatalytic decomposition of hydrogen produced by water of the nano composite photocatalytic material are facilitated. Atthe same time, the characteristics of being easy to be molded of poly(3-hexylthiophene) can effectively avoid the problem of difficulty in recovery of powder materials.

Description

technical field [0001] The invention relates to a preparation method of a nanocomposite photocatalytic material, in particular to a preparation method of a poly 3-hexylthiophene / self-doped defect-rich tin oxide heterojunction nanocomposite photocatalytic material. Background technique [0002] In the context of the rapid development of information technology, traditional inorganic semiconductor materials and organic semiconductor materials show certain performance bottlenecks. The processing technology of inorganic semiconductor materials is relatively complex and cannot be processed in a large area, and it is impossible to manufacture flexible materials. Although organic materials do not have the technical constraints of inorganic materials, the relatively low carrier concentration and mobility of organic materials greatly limit its application range. Carrier mobility is the most critical parameter affecting the photocatalytic performance of semiconductors, and it is direc...

Claims

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Application Information

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IPC IPC(8): B01J31/26B01J35/02C02F1/30C02F1/72C02F101/30C02F101/34C02F101/36C02F101/38
CPCC02F1/30C02F1/725B01J31/26C02F2305/10C02F2101/38C02F2101/36C02F2101/34C02F2101/308B01J35/40B01J35/39
Inventor 杨柳青
Owner PINGDINGSHAN UNIVERSITY
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