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A kind of storage device and its preparation method of anti-large overload impact

A storage device and high-resistance technology, applied in the field of storage, can solve the problems of poor fluidity, low strength of silicone rubber, fast curing time, etc., to improve impact resistance and reliability, improve impact resistance, and improve potting glue. performance effect

Active Publication Date: 2021-10-29
HUBEI SANJIANG SPACE XIANFENG ELECTRONICS&INFORMATION CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In harsh working environments, polyurethane potting materials not only have lower tensile strength and impact strength than epoxy resins, but also have high viscosity, poor fluidity, fast curing time, and poor operability. Sealing materials are often difficult to meet the requirements
[0007] (3) Silicone rubber can maintain elasticity for a long time in a wide temperature range, does not absorb or release heat during vulcanization, and has excellent electrical properties and chemical stability, but silicone rubber has low strength and poor adhesion The disadvantages of silicone rubber, and the tensile strength and impact strength index of silicone rubber is low, it can not play the protective role of the core layer of the structure

Method used

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  • A kind of storage device and its preparation method of anti-large overload impact
  • A kind of storage device and its preparation method of anti-large overload impact
  • A kind of storage device and its preparation method of anti-large overload impact

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Embodiment Construction

[0041] In order to make the objects, technical solutions and advantages of the present invention, the present invention will be described in detail below with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are intended to explain the present invention and is not intended to limit the invention.

[0042] Further, the technical features according to each of the various embodiments described below can be combined with each other as long as they do not constitute a collision between each other. The invention will be further described in detail below in conjunction with specific embodiments.

[0043] figure 1 Structure of storage device for a resistance to a large overload impact of the present invention. like figure 1 As shown, the storage device includes a housing 1, a second pupping gel 2, an inner casing 3, a first potting, a memory plate 5, an inner cover 6, an outer cover 7, a screw 8, a bumper pad 9 The...

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Abstract

The invention discloses a large overload impact resistant storage device and a preparation method thereof. The storage device comprises a storage board, an inner casing, a first potting glue, a second potting glue, an outer casing, an inner cover plate and an outer cover plate, the inner shell is a hollow shell, which forms a first hollow cavity after being sealed by the inner cover plate, the storage plate is accommodated in the first hollow cavity, and the first filling The encapsulant is disposed in the first hollow cavity and fills the remaining space of the first hollow cavity, so as to wrap the storage board tightly; the outer shell is a hollow shell, which passes through the outer cover After the plate is covered, a second hollow cavity is formed. The inner casing and the inner cover plate covering the storage plate are integrally accommodated in the second hollow cavity, and the second potting compound is filled and arranged in the second hollow cavity. The hollow cavity is filled with the remaining space of the second hollow cavity, so as to wrap the inner casing and the inner cover tightly, thereby greatly improving the impact resistance of the storage device, and realizing the impact resistance in the high overload impact environment Medium storage devices can still guarantee the reliability of stored data.

Description

Technical field [0001] The present invention belongs to the field of memory, and more particularly to a storage device for anti-large overload impact and a preparation method thereof. Background technique [0002] The data storage device in the missile control system is used to record missile telemetry signals and flight data. When the carrier of the data storage device is from high altitude from high altitude, the data storage device will be high. Intensity transient impact, overload peak reached tens of thousand g. Therefore, the core of the carrier's data storage device structure is to resist the overload impact to ensure that it can be reliably read data after the reinstation can endily subjected to multiple high-intensity transient impacts. [0003] How to stop the memory board in the data storage device in the housing of the data storage device is a key process technology produced by the data storage device. The potting is to make a reasonable arrangement, assembly, connect...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11B33/08G11B33/14
CPCG11B33/08G11B33/14G11B33/1433
Inventor 何琼王鑫
Owner HUBEI SANJIANG SPACE XIANFENG ELECTRONICS&INFORMATION CO LTD
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