A kind of ferroelectric thin film material device and its preparation method

A ferroelectric thin film and device technology, applied in the field of ferroelectric thin film material devices and their preparation, to achieve the effects of superior ferroelectric photovoltaic performance, good ferroelectricity, and high energy storage density

Inactive Publication Date: 2020-04-07
SOUTH CHINA NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The highest reported energy storage density of such materials is only 2-5 J / cm 3 , the efficiency is 30-40%, and its open-circuit voltage is about 0.3-0.6V. Voltage resistance, energy storage efficiency and photovoltaic performance are the bottlenecks of its development

Method used

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  • A kind of ferroelectric thin film material device and its preparation method
  • A kind of ferroelectric thin film material device and its preparation method
  • A kind of ferroelectric thin film material device and its preparation method

Examples

Experimental program
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Effect test

Embodiment 1

[0024] The preparation method of the ferroelectric thin film material device of the present invention comprises the following steps:

[0025] Step 1: Preparation of ferroelectric material lead zirconate titanate Pb(Zr 0.52 Ti 0.48 )O 3 (hereinafter referred to as PLZT) sol.

[0026] In this embodiment, the molar concentration of the PZT sol is 0.25 mol / L, and the volume is 100 mL. The preparation raw materials of PZT sol are shown in Table 1:

[0027] Table 1 Preparation materials of PZT sol

[0028] Drug Name molecular weight drug purity Experimental ratio stoichiometric number Weighing mass Lead acetate trihydrate 379.33 0.995 1.2 0.03 11.43 Zirconium n-propoxide 327.57 0.7 0.52 0.013 6.09 Titanium tetraisopropoxide 284.22 0.95 0.48 0.012 3.59

[0029] The specific preparation steps are as follows:

[0030] 1) Weigh the required raw materials according to the weighing quality in Table 1;

[0031] 2) adding lead ace...

Embodiment 2

[0043] This example is basically the same as Example 1, except that in the preparation raw materials of PZT sol, the lead in Example 1 is excessive by 20%, but the lead in this example is not excessive.

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Abstract

The invention discloses a ferroelectric thin film material device and a preparation method thereof. The preparation method of the ferroelectric thin film material device comprises the following steps:preparing a PZT sol; performing spin-coating of the PZT sol on a Pt / Si substrate by a glue homogenizer, drying and annealing to obtain a coating, and repeatedly performing operation of spin-coating,drying and annealing to obtain a PZT ferroelectric thin film; and then depositing a Pt electrode on a PZT ferroelectric thin film to obtain PZT ferroelectric thin film material device. The PZT ferroelectric thin film material device prepared by the invention has excellent energy storage performance and photovoltaic performance, and the maximum energy storage density can reach 9.4 J / cm3, the energystorage efficiency can be maintained above 60%, and the open circuit voltage is -94V, and the switching ratio is up to 20,000 times.

Description

technical field [0001] The invention relates to the field of capacitors and photovoltaic devices, in particular to a ferroelectric thin film material device and a preparation method thereof. Background technique [0002] With the rapid development of power systems, high-energy capacitors can provide much greater discharge power than batteries. Due to limited energy storage density, most of the capacitors currently on the market are ceramic capacitors, which are large in size and cannot meet the requirements of device miniaturization. In the direction of photovoltaics, silicon-based materials are mainly doped with elements such as arsenic, phosphorus, and gallium, which are generally difficult to synthesize, and their open circuit voltage and conversion efficiency are low. Research on new photovoltaic materials is imminent. The research of new dielectric materials is conducive to improving the energy storage density of dielectric materials, and can withstand higher voltages a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G13/00H01G4/10H01L31/18H01L31/032
CPCH01G4/10H01G13/00H01L31/0324H01L31/18Y02P70/50
Inventor 曾敏陈义陈建伟陆旭兵高兴森刘俊明
Owner SOUTH CHINA NORMAL UNIVERSITY
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