Testing method for yield and breakdown voltage of novel silicon carbide avalanche diode array

Abstract

The invention discloses a testing method for yield and a breakdown voltage of an novel silicon carbide avalanche diode array, which comprises the following steps of: randomly selecting two or more devices in the novel silicon carbide avalanche diode array to test an I-V characteristic to obtain a breakdown voltage average value Vb; applying a bias voltage to a single device in the novel silicon carbide avalanche diode array with 1.1Vb as a testing highest voltage, and gradually increasing the bias voltage to the testing highest voltage; preliminarily judging whether the device is available ornot by taking the currents as 10-7A and 10-6A as the breakdown point and the current limiting point respectively; and applying the bias voltage to the single device to determine if the device is damaged due to a high voltage testing. The testing method for the yield and the breakdown voltage of the novel silicon carbide avalanche diode array reduces a testing period of a SiC-based APD array, improves the breakdown voltage testing accuracy of the SiC-based APD, improves the consistency of device operation in the array, reduces the damage caused by the testing on the device, and improves the safety of test personnel.

Description

technical field [0001] The invention relates to a novel silicon carbide avalanche diode array yield rate and breakdown voltage testing method, which belongs to the field of silicon carbide avalanche diodes. Background technique [0002] As one of the representatives of the third-generation wide-bandgap semiconductor materials, silicon carbide (SiC) has obvious advantages in the preparation of ultraviolet detectors due to its large bandgap width, high electron saturation drift speed, and good chemical stability. Material advantage. The SiC material preparation technology is relatively mature, with low microscopic defects, and has a variety of structure types. Among them, 4H-SiC has the largest forbidden band width of 3.26eV, and the corresponding cut-off wavelength is 380nm, so 4H-SiC has the characteristic of visible light blindness. At present, many emerging application fields, such as missile tail flame warning and monitoring, corona arc detection and imaging of high-volt...

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Problems solved by technology

[0006] The invention proposes a new silicon carbide avalanche diode array yield rate and breakdown voltage test method, the purpose is to solve the problems of long test time and insufficient breakdown voltage accuracy in the traditional SiC-based APD array test, and further solve the problem of manual test Insufficient security and other issues

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