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Bonded body, substrate for power module, power module, method for manufacturing the bonded body, and method for manufacturing substrate for power module

A manufacturing method and technology for power modules, which are applied in semiconductor/solid-state device manufacturing, manufacturing tools, welding/welding/cutting items, etc., can solve the problems of large thermal stress on ceramic substrates, high heating temperature, and hard intermetallic compounds, etc. To achieve the effect of suppressing partial discharge

Active Publication Date: 2022-05-13
MITSUBISHI MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] Since the intermetallic compound formed near the ceramic substrate is relatively hard, there is a problem that when a thermal cycle load is applied to the substrate for a power module, the thermal stress generated on the ceramic substrate is large, and it is easy to occur on the ceramic substrate. crack
[0015] Recently, however, semiconductor elements mounted on power module substrates tend to generate higher temperatures, and cooling and heating cycles at higher temperatures (for example, 200°C or higher) are applied to power module substrates mounted with such semiconductor elements. load
[0016] Here, as described in Patent Documents 2 to 4, there is a problem in the substrate for a power module in which a ceramic substrate and a Cu plate are bonded using Cu—P based brazing filler metal. Partial discharge is prone to occur when the load

Method used

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  • Bonded body, substrate for power module, power module, method for manufacturing the bonded body, and method for manufacturing substrate for power module
  • Bonded body, substrate for power module, power module, method for manufacturing the bonded body, and method for manufacturing substrate for power module
  • Bonded body, substrate for power module, power module, method for manufacturing the bonded body, and method for manufacturing substrate for power module

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no. 1 approach

[0056] Hereinafter, embodiments of the present invention will be described with reference to the drawings. First, a first embodiment of the present invention will be described.

[0057] The bonded body according to the present embodiment is a power module substrate 10 formed by bonding ceramic substrate 11 which is a ceramic component and Cu plate 22 (circuit layer 12 ) which is a Cu component. figure 1 A power module 1 including a power module substrate 10 according to the present embodiment is shown in FIG.

[0058] The power module 1 includes: a power module substrate 10 provided with a circuit layer 12; and a semiconductor element 3 bonded to one side of the circuit layer 12 via a solder layer 2 (in figure 1 Middle is the upper surface).

[0059] Such as figure 2 As shown, the power module substrate 10 includes a ceramic substrate 11 and one side of the ceramic substrate 11 (in figure 2 The middle is the circuit layer 12 on the upper surface).

[0060] The ceramic s...

no. 2 approach

[0098] Next, a second embodiment of the present invention will be described. In addition, the same code|symbol is used for the same structure as 1st Embodiment, and detailed description is abbreviate|omitted.

[0099] Figure 6 A power module 101 including a power module substrate 110 according to the second embodiment is shown.

[0100] The power module 101 includes: a power module substrate 110 on which a circuit layer 112 and a metal layer 113 are disposed; and a semiconductor element 3 bonded to one side of the circuit layer 112 via a solder layer 2 ( Figure 6 middle is the upper surface); and the heat sink 130 is configured on the other side of the metal layer 113 (in Figure 6 Middle is the lower side).

[0101] Such as Figure 7 As shown, the power module substrate 110 includes: a ceramic substrate 11; a circuit layer 112 disposed on one side of the ceramic substrate 11 (in Figure 7 The middle is the upper surface); and the metal layer 113 is arranged on the othe...

no. 3 approach

[0126] Next, a third embodiment of the present invention will be described. In addition, the same code|symbol is used for the same structure as 1st Embodiment, and detailed description is abbreviate|omitted.

[0127] Figure 11 A power module 201 including a power module substrate 210 according to the third embodiment is shown.

[0128] The power module 201 includes: a power module substrate 210 on which a circuit layer 212 and a metal layer 213 are disposed; and a semiconductor element 3 bonded to one side of the circuit layer 212 via a solder layer 2 ( Figure 11 The middle is the upper surface); and the heat sink 230 is bonded to the other side of the power module substrate 210 (in Figure 11 Middle is the lower side).

[0129] Such as Figure 12 As shown, the power module substrate 210 includes: a ceramic substrate 11; a circuit layer 212 disposed on one side of the ceramic substrate 11 (in Figure 12 The middle is the upper surface); and the metal layer 213 is arrang...

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Abstract

The bonded body of the present invention is a bonded body of a ceramic member made of ceramics and a Cu member made of Cu or a Cu alloy, and in a bonded layer formed between the ceramic member and the Cu member, from the bonded surface of the ceramic member toward the Cu member Cu in the region with a side distance of 50 μm 3 The area ratio of the P phase is 15% or less.

Description

technical field [0001] The present invention relates to a bonded body formed by bonding a ceramic member and a Cu member, a substrate for a power module in which a Cu plate made of Cu or a Cu alloy is bonded to a ceramic substrate, a power module including the substrate for a power module, and a bonded body. A method for manufacturing a body and a method for manufacturing a substrate for a power module. [0002] This application claims priority based on patent application No. 2016-010676 filed in Japan on January 22, 2016 and patent application No. 2017-000417 filed in Japan on January 5, 2017, and the contents thereof are cited here. Background technique [0003] A semiconductor device such as an LED or a power module has a structure in which a semiconductor element is bonded to a circuit layer made of a conductive material. [0004] Power semiconductor elements for high-power control used to control wind power generation or electric vehicles such as electric vehicles have...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/13H01L23/14H01L23/36
CPCC04B35/581C04B35/645C04B37/026C04B2235/3244C04B2235/6562C04B2235/6567C04B2237/121C04B2237/122C04B2237/124C04B2237/126C04B2237/127C04B2237/128C04B2237/366C04B2237/402C04B2237/407C04B2237/704C04B2237/706C04B2237/72C04B2237/74H01L23/3735H01L23/15H01L21/4871B23K2101/36B23K2101/40B23K2103/172B23K35/302B23K35/0233B23K1/008B23K35/0238B23K35/262H01L24/32H01L24/29H01L2224/291H01L2224/32227H01L2924/12041H01L24/83H01L2224/83801H01L2224/83447H01L2224/29109H01L2224/29139H01L2224/29147H01L2224/29111H01L2924/014H01L2924/00014H01L2924/01029H01L2924/0105H01L2924/01047H01L2924/01049C22C9/02H01L23/142H01L23/3731H01L23/3736H01L23/53228H01L21/4882B23K35/3006
Inventor 寺崎伸幸长友义幸
Owner MITSUBISHI MATERIALS CORP
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