A kind of preparation method of titanium-based boron-doped diamond coating

A boron-doped diamond and titanium-based technology, applied in metal material coating process, coating, gaseous chemical plating, etc., can solve the problems of inability to obtain ion bombardment effect and low ionization rate

Active Publication Date: 2019-10-22
北京中科太赫兹科技有限公司
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The ionization rate of this method is low, even if a negative bias is applied to the workpiece, the ideal ion bombardment effect cannot be obtained

Method used

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  • A kind of preparation method of titanium-based boron-doped diamond coating

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Embodiment 1

[0024] 50 mm outer diameter, 2 mm wall thickness, and 300 mm long titanium tube 2 are installed on the workpiece frame 3 of the DC arc plasma chemical vapor deposition device, and the center of the titanium tube 2 is 70 mm away from the center of the vacuum chamber. The specific operation process is as follows: 1) Use a vacuum pump to vacuum the back of the vacuum chamber 1 to below 1Pa. 2) The Ar flow rate is 1.5SLM, and the vacuum degree of the vacuum chamber is controlled to be 300Pa. The discharge between the cathode 4 and the anode 6 produces a plasma column 5, and the arc current is adjusted to 100A. 3) The H2 and the CH of 40sccm that the flow rate is 200sccm are fed into 4 , adjust the vacuum to 1200Pa. 4) Adjust the magnetic field current of the magnetic coil 7 to 50A. 5) Rotate the titanium tube 2 and apply a negative bias voltage of 100V to the titanium tube 2 for 20 minutes to prepare a TiC enriched layer. 6) SiH with a flow rate of 30 sccm 4 , adjust the nega...

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Abstract

The invention relates to a preparation method of a high-quality titanium-based boron-doped diamond coating. The preparation method comprises the following steps: (1) bombarding Ar and C ions on the surface of titanium to form TiC, so as to prevent a titanium-hydrogen alloy layer from being formed; (2) depositing a transition layer SiC on the TiC to facilitate diamond nucleation; (3) at a nucleation phase, restraining H ions by utilizing a strong magnetic field to obtain a relatively high C / H ratio on the surface of a workpiece; meanwhile, carrying out Ar and C ion bombarding to preferentiallyform a diamond phase on the surface of the SiC; (4) reducing the magnetic field intensity at a deposition phase to reduce restraining, caused by a magnetic field, on the H ions, so as to realize the aim of reducing the C / H ratio on the surface of the workpiece and facilitate the growth of the high-quality boron-doped diamond coating. According to the method provided by the invention, before the nucleation of the boron-doped diamond, the formation of a brittle phase titanium-hydrogen alloy layer is avoided through ion bombarding. In a nucleation process, rich C ions are used for bombarding to preferentially generate the diamond phase. By adopting the key links, the binding force of the boron-doped diamond and the ratio of the diamond phase in a film layer are improved, so that the high-quality titanium-based boron-doped diamond coating is obtained on the surface of the titanium-based workpiece.

Description

technical field [0001] The invention belongs to the field of diamond coating preparation and relates to a method for depositing a boron-doped diamond coating on titanium. Background technique [0002] At the beginning of the 21st century, with the in-depth research on boron-doped diamond coatings, this material has shown the characteristics of high efficiency, broad spectrum and long life in the process of degrading organic wastewater, and has excellent application prospects in the field of water pollution control. At present, boron-doped diamond coatings are deposited internationally on silicon and niobium substrates by hot wire chemical vapor phase method. However, the difficulty of processing silicon and the high price of niobium have become obstacles to the popularization and application of boron-doped diamond electrode materials. The latest research focus is the deposition of boron-doped diamond electrodes on titanium substrates. However, the surface of metal titanium...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/02C23C16/27C23C16/32C23C16/513
Inventor 徐健张云龙邓朝阳
Owner 北京中科太赫兹科技有限公司
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