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Method for nucleation growth of polycrystal perovskite thin film by perovskite quantum dots and related photoelectric device

A technology for growing polycrystalline and optoelectronic devices, which is applied in the fields of electric solid-state devices, photovoltaic power generation, electrical components, etc., can solve the problems of perovskite lattice structure mismatch, unpredictable final morphology, poor compatibility, etc., and achieve Ease of nucleation and crystal growth, enhanced crystallinity, and improved performance parameters

Inactive Publication Date: 2018-07-27
ZHEJIANG SCI-TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these additives do not match the lattice structure of perovskite itself, and have poor compatibility, which will cause unpredictable final morphology

Method used

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  • Method for nucleation growth of polycrystal perovskite thin film by perovskite quantum dots and related photoelectric device
  • Method for nucleation growth of polycrystal perovskite thin film by perovskite quantum dots and related photoelectric device
  • Method for nucleation growth of polycrystal perovskite thin film by perovskite quantum dots and related photoelectric device

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Experimental program
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Embodiment 1

[0025] use figure 2 For the battery structure of a, the glass substrate coated with fluorine-doped tin oxide (FTO) was ultrasonically washed with deionized water, absolute ethanol, and acetone in sequence, and then a NiO hole transport layer with a thickness of 20 nm was thermally sprayed on the glass substrate. Using CH 3 NH 3 I and PbI 2 (molar ratio 1:1) configure the precursor solution of perovskite. Oleylamine and oleic acid were selected as coating agents and stabilizers to form CH with a size of 10nm 3 NH 3 PbBr 3 Quantum dots are dispersed in chlorobenzene solution to form a uniform and stable solution with a concentration of 0.005mg / ml. The perovskite precursor solution was spin-coated on the NiO hole transport layer, and then the quantum dot solution with a concentration of 0.005mg / ml was spin-coated, and then heated at 120°C for 10 minutes to obtain a CH with a thickness of 400nm. 3 NH 3 PB 3 perovskite layer.

[0026] A chlorobenzene solution of [6,6]-ph...

Embodiment 2

[0029] use image 3 The light-emitting diode structure of a, after washing the glass substrate coated with indium tin oxide (ITO) with deionized water, absolute ethanol, and acetone ultrasonically, spin-coat a layer of poly-3,4-ethylene with a thickness of 15 nm on the substrate. Dioxythiophene: Hole injection layer of polystyrene sulfonate. Using CH 3 NH 3 Br and PbBr 2 (molar ratio 1:1) configure the precursor solution of perovskite.

[0030] Hexylamine and octanoic acid were selected as capping agents and stabilizers to form CH with a size of 5nm 3 NH 3 PB 3Quantum dots are dispersed in toluene solution to form a uniform and stable solution with a concentration of 0.5 mg / ml. The perovskite precursor solution was spin-coated on the hole injection layer, and then the quantum dot solution with a concentration of 0.5mg / ml was spin-coated, and then heated at 100°C for 20 minutes to obtain a CH with a thickness of 300nm. 3 NH 3 PbBr 3 perovskite layer.

[0031] Spin-co...

Embodiment 3

[0034] use figure 2 For the battery structure of b, the glass substrate coated with indium tin oxide (ITO) was washed with deionized water, absolute ethanol, and acetone in sequence, and then a layer of 30nm thick C was prepared on the substrate by electron beam thermal evaporation. 60 electron transport layer. Using HC (NH 2 ) 2 I and PbI 2 (molar ratio 1:1) configure the precursor solution of perovskite.

[0035] Amylamine was chosen as capping agent and stabilizer to form CH with a size of 50nm 3 NH 3 PbCl 3 Quantum dots are dispersed in ether solution to form a uniform and stable solution with a concentration of 5 mg / ml. The perovskite precursor solution was spin-coated on C 60 On the electron transport layer, then dropwise add a quantum dot solution with a concentration of 5mg / ml, and then heat at 150°C for 10 minutes to obtain HC (NH 2 ) 2 PB 3 perovskite layer.

[0036] The CuSCN solution was spin-coated, and after curing, a hole transport layer with a thic...

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Abstract

The invention discloses a method for nucleation growth of a polycrystal perovskite thin film by perovskite quantum dots and a related photoelectric device. A perovskite quantum dot anti solvent at certain concentration is introduced to a precursor solution of the perovskite thin film to be processed at a certain temperature to complete nucleation growth of the polycrystal perovskite thin film through quantum dot induction. The perovskite thin film is used as a light absorption layer (or carrier recombination); by adopting a p-i-n or n-i-p structure and by introducing an electron transfer (or inject) layer, a hole transport (or inject) layer and an electrode and the like, a perovskite solar cell (or a perovskite light emitting diode) is prepared. The method is simple and high in process compatibility, so that the crystallization quality of the perovskite thin film is obviously improved, and the photoelectric conversion efficiency of the solar cell, and the light emitting performance andother performance of the light emitting diode are improved.

Description

technical field [0001] The invention belongs to the field of optoelectronic devices, and relates to a method for growing polycrystalline perovskite films by nucleation of perovskite quantum dots. Crystalline perovskite thin films are used in the preparation of high-performance perovskite optoelectronic devices, including solar cells and light-emitting diodes. Background technique [0002] In recent years, organometal halide perovskite solar cells have rapidly become a research hotspot in the field of photovoltaics. Organometal halide perovskite materials have the advantages of tunable band gap, high optical absorption coefficient and long carrier diffusion length. In just six or seven years, the highest conversion efficiency of organic metal halide perovskite solar cells has reached 22.1% (W.S.Yang, B.W.Park, E.H.Jung, et al.Science, 356 (2017) 1376), which is close to that of crystalline silicon solar cells s efficiency. In addition to photovoltaic applications, organome...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48H01L51/56H01L51/46H01L51/54H01L51/42H01L51/50B82Y30/00
CPCB82Y30/00H10K71/00H10K85/30H10K30/40H10K50/115Y02E10/549
Inventor 王朋肖科崔灿徐凌波林萍
Owner ZHEJIANG SCI-TECH UNIV
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