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A kind of doping modified nickel oxide base NTC thermistor material and preparation method thereof

A thermistor and raw material technology, applied in the field of NTC thermistor materials, can solve the problems of material aging, affecting material performance and service life, unstable electrical performance, etc., and achieve low sintering temperature, high flexibility and environmental friendliness Effect

Active Publication Date: 2021-02-05
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This relaxation phenomenon causes the instability of the electrical properties of the NTC ceramic material, which easily leads to the aging of the material and affects the performance and service life of the material.

Method used

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  • A kind of doping modified nickel oxide base NTC thermistor material and preparation method thereof
  • A kind of doping modified nickel oxide base NTC thermistor material and preparation method thereof
  • A kind of doping modified nickel oxide base NTC thermistor material and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0021] This embodiment according to the molecular formula Ni 1-x Al x o 1-y f y Dosing was performed where x=0, y=0.04. The initial raw material is selected from basic nickel carbonate NiCO 3 2Ni(OH) 2 4H 2 O, ammonium fluoride NH 4 F. Materials were prepared according to the following experimental process steps:

[0022] (1) The initial raw material is NiO 0.96 f 0.04 Ingredients, weigh NiCO 3 2Ni(OH) 2 4H 2 O 62.7050g, NH 4 F0.7408g;

[0023](2) Dissolve the raw materials weighed in the previous step: NiCO 3 2Ni(OH) 2 4H 2 O was dissolved in dilute nitric acid, and then ammonia water was added dropwise to adjust the pH value to about 8; NH 4 F is dissolved in distilled water;

[0024] (3) Mix the two solutions prepared in the previous step together, and use a magnetic stirring heater to stir and mix evenly, heat and dry;

[0025] (4) Calcining the powder obtained in the previous step at a temperature of 850° C. and keeping it warm for 5 hours;

[0026] (...

Embodiment 2

[0032] This embodiment according to the molecular formula Ni 1-x al x o 1-y f y Dosing was performed where x = 0.003, y = 0.04. The initial raw material is selected from basic nickel carbonate NiCO 3 2Ni(OH) 2 4H 2 O, ammonium fluoride NH 4 F, aluminum isopropoxide C 9 h 21 AlO 3 . Materials were prepared according to the following experimental process steps:

[0033] (1) The initial raw material is Ni 0.997 al 0.003 o 0.96 f 0.04 Formulation ingredients, weigh NiCO 3 2Ni(OH) 2 4H 2 O62.5169g, NH 4 F 0.7408g, C 9 h 21 AlO 3 0.3064g;

[0034] (2) Dissolve the raw materials weighed in the previous step, wherein NiCO 3 2Ni(OH) 2 4H 2 After O is dissolved in dilute nitric acid, ammonia water is added to adjust the pH value to about 8. NH 4 F dissolved in distilled water, C 9 h 21 AlO 3 Soluble in ethanol;

[0035] (3) The preparation process is the same as steps (3) to (8) in Example 1

[0036] The properties of the prepared materials are shown in T...

Embodiment 3

[0038] This example according to molecular formula Ni 1-x al x o 1-y f y Dosing was performed where x = 0.005, y = 0.04. The initial raw material is selected from basic nickel carbonate NiCO 3 2Ni(OH) 2 4H 2 O, ammonium fluoride NH 4 F, aluminum isopropoxide C 9 h 21 AlO 3 . . Materials were prepared according to the following experimental process steps:

[0039] (1) The initial raw material is Ni 0.995 al 0.005 o 0.96 f 0.04 Formulation ingredients, weigh NiCO 3 2Ni(OH) 2 4H 2 O62.3915g, NH 4 F 0.7408g, C 9 h 21 AlO 3 0.5106g;

[0040] (2) The preparation process is the same as steps (2)-(3) in Example 2.

[0041] The properties of the prepared materials are shown in Table 1. figure 1 and figure 2 shown.

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Abstract

The invention relates to a semiconductor ceramic material and especially provides a thermistor material which has a negative temperature coefficient (NTC). In the invention, the NTC thermistor material includes nickel oxide as a main component, wherein the content of a micro-scale semiconductive doping element, fluorine, can be adjusted in order to control the room-temperature resistance of a thermistor component; besides, by adding a micro-scale modifying element, aluminum, the room-temperature resistance and NTC material constant value can be further regulated. The NTC thermistor material issuitable for sintering molding of a thermal sensitive ceramic component, a thin-film thermal sensitive component and a low-temperature cofiring lamination thermal sensitive component. The thermistormaterial has good stability, consistency and repeatability, is controllable in electrical features, such as resistance value, material constant and temperature coefficient of resistance, is suitable for temperature measurement and control and line compensation, protection for circuits and electronic components, and the fields of instrument and application of measurement on flow speed, flow quantity and ray detection.

Description

technical field [0001] The invention relates to an NTC thermistor material for preparing a thermistor element with a negative temperature coefficient (NTC) effect of resistance. Applicable to temperature measurement, temperature control and line compensation, as well as protection of circuits and electronic components, as well as instruments and applications for flow velocity, flow, and ray measurement. Background technique [0002] Thermal sensors are devices made using the characteristics of material resistivity that changes with temperature, including positive temperature coefficient (PTC) thermistors whose resistivity increases with temperature or those whose resistivity decreases with temperature Negative Temperature Coefficient (NTC) Thermistor Element. NTC thermistor components and devices have been widely used in temperature measurement, control, temperature compensation, suppression of surge current, protection of circuits and electronic components, and related ins...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/01C04B41/88C04B35/64
CPCC04B35/01C04B35/64C04B41/009C04B41/5116C04B41/88C04B2235/3217C04B2235/3279C04B2235/445C04B2235/96C04B41/4539
Inventor 王高民李志成张鸿
Owner CENT SOUTH UNIV
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