Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Diamond/Si (Al) composite preparation technological method by vacuum infiltration method

A composite material and process method technology, which is applied in the field of diamond particle reinforced composite materials to achieve the effects of low processing difficulty, low expansion and high lightness

Inactive Publication Date: 2018-07-06
UNIV OF SCI & TECH BEIJING
View PDF2 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Diamond / silicon composite materials have many excellent properties during use. According to the current research progress, the thermal conductivity of diamond / silicon composite materials can reach up to 600W / mK, and the thermal expansion coefficient can be maintained at 1.5~4×10 -6 / K level, but there are still some unavoidable difficulties in the actual production process of this composite material with excellent thermal properties

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0023] Weigh 17g of 100μm diamond single crystal particles, 4g of silicon powder, 1.5g of aluminum powder, and 3g of phenolic resin powder. Soak silicon powder, aluminum powder and phenolic resin in absolute ethanol, heat and stir to form a paste, then add weighed diamond particles and stir evenly. Afterwards, the mixed powder was put into a ball mill jar, and mixed on a planetary ball mill with a speed of 1500 r / min for 12 hours. After the mixing is completed, the mixed powder is washed with absolute ethanol, dried, and sieved with an 800-mesh sieve to obtain a mixed powder with uniform particle size. Weigh 2g of the mixed powder, put it into a Φ20mm mold, and press it on a warm press with a pressure of 60MPa and a temperature of 80°C to obtain a cylindrical porous prefabricated body. Subsequently, the porous green body was put into a vacuum degreasing furnace for degreasing treatment at a temperature of 1000° C. for 60 min. After the degreasing is completed, the green body...

example 2

[0025]Mix the phenolic resin and acetone solution, and heat it to dissolve completely, then mix the silicon powder, 50μm diamond and aluminum powder, and stir until it becomes a paste. Wherein the weight percentages of phenolic resin, silicon powder, diamond and aluminum powder are respectively 18%, 20%, 12% and 50%. Then the mixture was put into a ball mill jar and mixed on a mixer at 1000r / min for 16 hours. After the mixing is completed, the ball mill tank is cleaned with acetone, and the obtained mixture is dried in an oven at 80° C., and then sieved with a 1000-mesh screen. Then the mixture powder was put into a mold of 10 mm×40 mm, the mold was heated to 120° C., and a pressure of 60 MPa was applied to obtain a porous preform with a fixed shape. The porous preform is degreased in a vacuum tube furnace, wherein the holding temperature is 1000°C, the holding time is 90min, and the heating rate is 5°C / min. Then the degreased preform is placed in a vacuum infiltration furna...

example 3

[0027] Mix polypropylene with absolute ethanol and heat to dissolve, then add 50μm diamond, aluminum powder, and high-purity silicon with a particle size of 50μm and a purity of 99.99% to the mixture, and heat and stir until it becomes a paste, in which polypropylene, diamond , silicon powder, and aluminum powder are 15%, 55%, 20%, and 10% by weight. Then put the mixture into a ball mill tank, add grinding balls, and mix on a mixer with a rotating speed of 800r / min. After the mixing is completed, the ball mill tank is cleaned with absolute ethanol, and the obtained mixture is dried in an oven at 100° C., and then subdivided with a 1000-mesh sieve. Next, put the subdivided mixed material into a Φ10mm mold, and perform pre-press molding at 120° C. under a pressure of 50 MPa to obtain a porous preform. Put the preform into a tube furnace with argon atmosphere for degreasing, the degreasing temperature is 1000°C, the degreasing time is 90min, and the heating rate is 5°C / min. Aft...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
densityaaaaaaaaaa
melting pointaaaaaaaaaa
Login to View More

Abstract

The invention discloses a diamond / Si (Al) composite preparation technological method by a vacuum infiltration method, which belongs to the field of electronic packaging materials. The method is characterized by comprising steps: the vacuum infiltration method is adopted to mix silicon powder, aluminum powder and an organic binder according to a proper proportion, and being wetted to a paste by using an organic solvent is carried out; then, diamond particles are added, uniform stirring is carried out, uniform mixing by using a mixer is carried out, and a porous prefabricated billet with a regular shape is pressed; degreasing treatment is then carried out and the organic binder is decomposed completely; the porous billet is then put in a vacuum infiltration furnace and is buried by the silicon powder, sealing and vacuuming are carried out, the temperature rises above the melting point of silicon, liquid infiltration is carried out, compactness of the porous billet is realized, and a diamond / Si / Al composite with a regular shape, high compactness and excellent thermal physical properties can be prepared. The composite is a potential matrix material for electronic packaging, and has theadvantages of high thermal conductivity, low expansion, low density, high lightness, easy preparation, and little later processing difficulty.

Description

technical field [0001] The invention belongs to the field of electronic packaging materials and relates to a diamond particle reinforced composite material for electronic packaging. The diamond / SiC composite material prepared by this method is a new type of electronic packaging material with high density, high thermal conductivity and low thermal expansion, and has great market potential in the manufacture and production of integrated circuit substrates. Background technique [0002] With the rapid development of electronic technology, the development of integrated circuits is changing with each passing day. With the improvement of circuit efficiency, the efficiency of internal components of the circuit is also increasing. A key problem arising from this is that a large amount of heat generated during the operation of the circuit is concentrated and cannot be dissipated from the components in time. If it goes out, it will inevitably reduce the operating efficiency of the co...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/56
CPCH01L21/56
Inventor 何新波郑伟吴茂曲选辉
Owner UNIV OF SCI & TECH BEIJING
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com