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Photoelectrode with growth of InxGa1-xN nanowires on tantalum substrate and preparation method of photoelectrode

A nanowire and photoelectrode technology, which is applied in the direction of electrodes, chemical instruments and methods, catalyst activation/preparation, etc., can solve the problems of being unable to be used as electrodes, use, and non-conductive sapphire substrates, and achieve easy operation and maintenance and high efficiency , to achieve the effect of large-scale low-cost production

Active Publication Date: 2018-06-22
XIAMEN UNIV OF TECH
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  • Claims
  • Application Information

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Problems solved by technology

Commonly used sapphire substrates are not conductive and cannot be used as electrodes

Method used

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  • Photoelectrode with growth of InxGa1-xN nanowires on tantalum substrate and preparation method of photoelectrode
  • Photoelectrode with growth of InxGa1-xN nanowires on tantalum substrate and preparation method of photoelectrode
  • Photoelectrode with growth of InxGa1-xN nanowires on tantalum substrate and preparation method of photoelectrode

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preparation example Construction

[0051] The embodiment of the present invention provides the above-mentioned tantalum substrate for growing In x Ga 1-x The preparation method of N nanowire photoelectrode includes the following steps:

[0052] S1, providing a Ta substrate, and performing surface treatment on the Ta substrate to construct an intermediate layer;

[0053] S2, using VLS-CVD method to grow In on the intermediate layer x Ga 1-x N nanowires to form In x Ga 1-x N nanowire layer.

[0054] Further, the step of performing surface pretreatment on the Ta substrate includes:

[0055] S11, oxidizing the surface of the Ta substrate by an anodic oxidation method to form a tantalum oxide pit layer on the surface of the Ta substrate.

[0056] S12, ammoniating the oxidized Ta substrate.

[0057] Wherein, in step S11, in the oxidation process, a dense tantalum oxide layer and a tantalum oxide nanotube array grown on the dense tantalum oxide layer are first formed on the surface of the Ta substrate, and then the tantalum oxid...

Embodiment 1

[0074] In this embodiment, a tantalum substrate is provided to grow In x Ga 1-x The photoelectrode of N nanowire includes the following steps:

[0075] (1) Anodized tantalum oxide sheet: use electrolyte as: H 2 SO 4 :H 2 O:HF=95:4:1, voltage 80V, time 2min. Then soak in ethanol for 5min, N 2 Blow dry. Then it was placed in a sliding rail furnace, and ammoniated at 950°C for 130 minutes, and the ammonia flow was 100 sccm.

[0076] (2) Apply catalyst:

[0077] Take the ammoniated tantalum sheet, ultrasonically clean in acetone, ethanol, and deionized water for 5 minutes, and dry at 40°C. Add 10 μL of gold-nickel solution dropwise to the tantalum sheet. The gold-nickel solution is a mixture of 0.02M chloroauric acid solution and 0.02M nickel nitrate solution with a volume ratio of 2:1.

[0078] (3) Use Figure 4 The shown CVD device grows nanowires:

[0079] Put the tantalum sheet in step (2) into the second temperature zone L2, put 0.15g of gallium acetylacetonate and 0.05g of indium a...

Embodiment 2

[0081] In this embodiment, a tantalum substrate is provided to grow In x Ga 1-x The difference between the photoelectrode of the N nanowire and the first embodiment is that metal indium and metal gallium are used as the source of indium and gallium.

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Abstract

The invention discloses a photoelectrode with growth of InxGa1-xN nanowires on a tantalum substrate. The photoelectrode comprises the Ta substrate, an intermediate layer and an InxGa1-xN nanowire layer, wherein the x is equal to 0.05-0.5, the intermediate layer comprises Ta nitride, is formed between the Ta substrate and the InxGa1-xN nanowire layer, and is matched with the energy level of the InxGa1-xN nanowire layer. A preparation method comprises the steps that a tantalum sheet is subjected to pretreatment through an anodic oxidation method in combination with a high-temperature ammoniationmethod to form the intermediate layer, and then a VLS-CVD method is adopted to make the InxGa1-xN nanowires grow on the treated tantalum sheet. According to the designed photoelectrode with a Ta / (Ta2N / TaN / TaN5) / InxGa1-xN nanowire structure, the intermediate layer matched with the energy level is constructed, so that efficiency of the photocatalytic decomposition water hydrogen production and thephotocatalytic degradation of organic pollutants in water is greatly improved, moreover, the method is simple, and an important application prospect in the aspect of solving the energy and environmentproblems is achieved.

Description

Technical field [0001] The present invention relates to the technical field of hydrogen production by photo-splitting water, and in particular to a tantalum substrate growing In x Ga 1-x Photoelectrode of N nanowire and preparation method thereof. Background technique [0002] Energy shortage and environmental degradation are the two major problems facing mankind. The use of photocatalytic materials for water decomposition to produce hydrogen can on the one hand use light to degrade organic pollutants, and on the other hand, directly convert solar energy into hydrogen energy. Hydrogen can be stored and has high thermal efficiency. It is an ideal clean energy and an important chemical raw material. Photo splitting water to produce hydrogen can avoid the generation of by-product carbon dioxide in the existing hydrogen production method, which is more environmentally friendly. Therefore, photocatalytic materials have dual application prospects in solving energy and environmental p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25B11/06C25B1/04B01J27/24B01J37/02
CPCC25B1/04B01J27/24B01J37/0226C25B1/55C25B11/051C25B11/075C25B11/091B01J35/33B01J35/39Y02E60/36
Inventor 胡艳玲徐桂焰柏天程朱玉琴黄家亮纪华羽杨豪斌
Owner XIAMEN UNIV OF TECH
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