Method and device for representing and calibrating TSV electroplating additive parameters

A calibration method and characterization technology, applied in the field of electrochemistry, can solve problems such as the complexity of the action mechanism of additives and the difficulty of measuring various parameters

Active Publication Date: 2018-06-15
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In TSV electroplating copper technology, due to the complexity of the action mechanism of additives in the plating solution, various parameters are difficult to measure

Method used

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  • Method and device for representing and calibrating TSV electroplating additive parameters
  • Method and device for representing and calibrating TSV electroplating additive parameters
  • Method and device for representing and calibrating TSV electroplating additive parameters

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] The exchange current density and cathodic transfer coefficient of the electroplating solution without TSV electroplating additives were measured by linear voltammetry. Linear sweep voltammetry measures the current at the working electrode, where the voltage between the working and reference electrodes varies linearly with time.

[0053] Exchange current density: When the electrode reaction is in equilibrium, the two directions of the electrode reaction proceed at the same speed, and the corresponding absolute value of the current density of the anodic reaction and the cathodic reaction in the two reaction directions is called the exchange current density.

[0054] Cathode transfer coefficient: It characterizes the increase degree of Gibbs free energy of activation of cathode reduction reaction.

[0055] Step One: Prepare the Test Solution

[0056] Measure 40 milliliters of SYS2510 electroplating solution with a beaker as a test solution;

[0057] Step 2: Electrode Pre...

Embodiment 2

[0073] Characterization and Calibration of Inhibitor Diffusion Coefficient in Electroplating Bath

[0074] Step One: Prepare the Test Solution

[0075] Measure 35ml of SYS2510 solution as the electroplating solution and place it in a beaker, use a syringe to take 5ml of the mixed solution, including 4.6ml of SYS2510 and 0.4ml of UPT3320S, as an additive;

[0076] Step 2: Electrode Pretreatment

[0077] Polish the electrode with sandpaper to remove the oxide layer on the surface of the electrode, and clean the polished electrode with deionized water to ensure good conductivity of the electrode;

[0078] Step 3: Inject the test solution into the plating tank and install the electrodes

[0079] Inject the 35ml SYS2510 solution prepared in the beaker into the electroplating tank, follow the Figure 5 As shown, the counter electrode (platinum electrode), working electrode (platinum rotating disk electrode) and reference electrode (mercurous sulfate electrode) are installed on th...

Embodiment 3

[0090] Characterization and Calibration of Accelerator Diffusion Coefficient in Electroplating Bath

[0091] Step One: Prepare the Test Solution

[0092] Measure 4.875ml of SYS2510 and 34.125ml of deionized water, mix them as plating solution and place in a beaker, use a syringe to take 1ml of UPT3320A solution as an additive;

[0093] Step 2: Electrode Pretreatment

[0094] Polish the electrode with sandpaper to remove the oxide layer on the surface of the electrode, and clean the polished electrode with deionized water to ensure good conductivity of the electrode;

[0095] Step 3: Inject the test solution into the plating tank and install the electrodes

[0096] Inject 4.875 milliliters of SYS2510 and 34.125 milliliters of deionized water prepared in the beaker into the electroplating tank, and place the counter electrode (platinum electrode), working electrode (platinum rotating disk electrode) and reference electrode (saturated calomel electrode) as shown in Figure 5 El...

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Abstract

The invention discloses a method for representing and calibrating electroplating solution exchange current density i0 and cathode transfer coefficient alpha c. By adopting linear sweep voltammetry measurement, the invention also provides a method for representing and calibrating TSV electroplating additive diffusion coefficient; by adopting chronoamperometry testing, the simple testing method is designed by using an electrochemical workstation, so that electroplating solution exchange current density, cathode transfer coefficient and additive diffusion coefficient are obtained conveniently andeffectively.

Description

technical field [0001] The invention relates to the field of electrochemistry, in particular to a method for characterizing and calibrating parameters of TSV electroplating additives. Background technique [0002] Integrated circuit (IC) technology is developing rapidly in accordance with Moore's Law. High-density circuit integration requires high-density interconnection technology. In order to improve device performance and interconnection density, through-silicon via (TSV) interconnection is the core Three-dimensional integrated packaging technology has become an inevitable trend of development. TSV technology is a method that directly penetrates the silicon chip itself to realize the vertical up-down interconnection between stacked chips to form a high-density three-dimensional integrated chip. It has many advantages such as "high density, multi-function, and small size". [0003] The TSV hole diameter is usually tens of microns, and the aspect ratio can be as high as 10...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/48G01N27/416
CPCG01N27/416G01N27/48
Inventor 朱文辉王彦李祉怡吴厚亚王福亮
Owner CENT SOUTH UNIV
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