Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Polymer thin film dielectric medium as well as preparation method and use thereof

A polymer film and dielectric technology, applied in fixed capacitor dielectrics, film/thick film capacitors, multilayer capacitors, etc., can solve the problems of low dielectric constant, unpublished temperature resistance, poor temperature resistance, etc. Effects of thermal and dielectric properties, good self-healing properties, excellent heat resistance properties

Active Publication Date: 2018-06-15
INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
View PDF6 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As film capacitors are widely used in new energy vehicles such as electric vehicles and hybrid vehicles, the performance of polypropylene dielectrics in film capacitors cannot fully meet the application requirements.
For example, polypropylene has poor temperature resistance and high shrinkage, and the long-term use temperature is about 105°C. However, the application environment temperature of hybrid electric vehicles is 115°C. Therefore, as the working time increases, the internal temperature of polypropylene capacitors increases, resulting in Its stability drops sharply or even fails
[0003] Chinese patent CN201210376839 discloses a polystyrene-based dielectric film with a low dielectric constant (1.7-3.3) and no temperature resistance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polymer thin film dielectric medium as well as preparation method and use thereof
  • Polymer thin film dielectric medium as well as preparation method and use thereof
  • Polymer thin film dielectric medium as well as preparation method and use thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] Embodiment 1, the preparation of polyimide film dielectric

[0038] In a three-necked round-bottomed flask equipped with mechanical stirring and a nitrogen inlet and outlet, add 2.3027 grams (0.01 moles) of bis (4-aminophenoxy) methane and 24 grams of N-methylpyrrolidone (NMP), and stir to Dissolve completely, add 1.9611 grams (0.01 mole) 1,2,3,4-cyclobutane tetracarboxylic dianhydride (CBDA), obtain the homogeneous solution that solid content is 15wt.%, and continue to react for 8 hours to obtain polyamide acid solution.

[0039] After the above polyamic acid solution is filtered and vacuum defoamed, it is coated on a glass plate with a smooth surface. The temperature is raised in the step of ℃, an imidization reaction occurs, and a polyimide film is obtained. Place the glass plate in deionized water to peel off the film automatically, and dry it under vacuum at 50° C. for 2 hours to obtain a polyimide film dielectric with a thickness of 3 microns.

[0040] The Four...

Embodiment 2

[0043]In a three-necked round-bottomed flask equipped with mechanical stirring and a nitrogen inlet and outlet, add 3.0437 grams (0.0095 moles) of 1,4-(4-aminophenoxy)-2,3-methylbenzene and 55 grams of γ-butyrolactone , stirred under nitrogen protection until completely dissolved, and added 3.0631 g (0.01 mole) of decahydrobiphenyl-3,3',4,4'-tetracarboxylic dianhydride (HBPDA) to obtain a homogeneous solution with a solid content of 10wt.%. phase solution, and continued to react for 6 hours to obtain a polyamic acid solution.

[0044] After the above polyamic acid solution is filtered and vacuum defoamed, it is coated on a silicon wafer with a smooth surface. The temperature is raised in the step of ℃, an imidization reaction occurs, and a polyimide film is obtained. Place the silicon wafer in deionized water to peel off the film automatically, and dry it in vacuum at 80°C for 4 hours to obtain a polyimide film dielectric with a thickness of 25 microns.

[0045] The polyimid...

Embodiment 3

[0048] In a three-necked round-bottomed flask equipped with mechanical stirring and a nitrogen inlet and outlet, add 3.7650 g (0.01 mole) of 1,4-(4-aminophenoxy)-2,3-isopropylbenzene and N,N-dimethyl 18 grams of acetamide (DMAc), stirred under nitrogen protection until completely dissolved, added 2.1296 grams (0.0095 moles) of 1,2,4,5-cyclohexanetetracarboxylic dianhydride (CHDA) to obtain a solid content of 25wt .% homogeneous solution, and continued to react for 9 hours to obtain polyamic acid solution.

[0049] After the above polyamic acid solution is filtered and vacuum defoamed, it is coated on a glass plate with a smooth surface. The temperature is raised in the step of ℃, an imidization reaction occurs, and a polyimide film is obtained. Put the glass plate in deionized water to peel off the film automatically, and dry it in vacuum at 150° C. for 3 hours to obtain a polyimide film dielectric with a thickness of 10 microns.

[0050] The polyimide film that will make co...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
breakdown field strengthaaaaaaaaaa
thicknessaaaaaaaaaa
dielectric lossaaaaaaaaaa
Login to View More

Abstract

A polymer thin film dielectric medium consists of dianhydride structural units containing alicyclic structures and diamine structural units, wherein the molar composition ratio of the dianhydride structural units to the diamine structural units is [0.95-1.05]:1. The polymer thin film dielectric medium is obtained through condensation polymerization of a dianhydride containing an alicyclic structure with a diamine, and subsequent thermal imidization treatment. The preparation method is as follows: under the protection of an inert gas, dissolving the diamine into an organic solvent, adding the dianhydride containing the alicyclic structure into the mixture, performing stirring to obtain a homogenous solution, and allowing the homogenous solution to react continuously for 6-10 hours at a certain temperature, so as to obtain a polyamide acid (PAA) solution; and coating the polyamide acid solution containing the alicyclic structural dianhydride onto a substrate, subjecting the coated substrate to a heating and drying treatment of 2 hours at 50 DEG C, 1 hour at 100 DEG C, 1 hour at 150 DEG C, and 0.5 hour at 180 DEG C, then immersing the obtained substrate into deionized water for peeling, and then performing drying treatment again, so as to obtain the polyimide film dielectric medium. The polymer film dielectric medium provided by the invention is used for metallized film capacitorsof electric vehicles or hybrid electric vehicles.

Description

technical field [0001] The invention relates to a polymer dielectric and its preparation method and application. Background technique [0002] Film capacitors are widely used in home appliances, communications, power electronics, new energy vehicles, solar power generation, wind power generation and other industries. At present, film capacitors often use polypropylene film as a dielectric material. As film capacitors are widely used in new energy vehicles such as electric vehicles and hybrid vehicles, the performance of polypropylene dielectrics in film capacitors cannot fully meet the application requirements. For example, polypropylene has poor temperature resistance and high shrinkage, and the long-term use temperature is about 105°C. However, the application environment temperature of hybrid electric vehicles is 115°C. Therefore, as the working time increases, the internal temperature of polypropylene capacitors increases, resulting in Its stability drops sharply or eve...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C08G73/10C08J5/18H01G4/14H01G4/33
CPCC08G73/1007C08G73/1067C08G73/1078C08J5/18C08J2379/08H01G4/14H01G4/33
Inventor 佟辉徐菊
Owner INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com