Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A surface acoustic wave device based on silicon carbide substrate/zinc oxide or doped zinc oxide thin film and its preparation method

A surface acoustic wave device and silicon carbide substrate technology, applied in the direction of electrical components, impedance networks, etc., can solve the problems of large propagation loss and consistency, deterioration of piezoelectric film quality, deterioration of device performance, etc., to achieve small temperature coefficient, The effect of high power tolerance and simple process steps

Active Publication Date: 2020-11-10
TSINGHUA UNIV +1
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the substrate or film has high sound velocity and thermal conductivity, it is expected to produce high-frequency and high-power devices, but the major defects of these substrates or films are relatively large propagation loss and poor consistency compared with single crystal substrates.
These reflect on the device that the Q value is small, the propagation loss is large, and the uniformity of the device is poor.
The reason is that these diamonds or diamond-like carbons are polycrystalline materials, and the high density of crystal defects causes high propagation loss
In addition, these defects also largely deteriorate the quality of the piezoelectric film grown on it, further deteriorating the performance of the device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A surface acoustic wave device based on silicon carbide substrate/zinc oxide or doped zinc oxide thin film and its preparation method
  • A surface acoustic wave device based on silicon carbide substrate/zinc oxide or doped zinc oxide thin film and its preparation method
  • A surface acoustic wave device based on silicon carbide substrate/zinc oxide or doped zinc oxide thin film and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1、6

[0044] Example 1. Preparation of surface acoustic wave devices by depositing zinc oxide on 6H-SiC single crystal substrate

[0045] 1) Clean the 6H-SiC single crystal substrate (thickness 500μm) with acetone, alcohol and deionized water for 4-8 minutes, and then immerse the substrate in HF:H 2 O (1:10, v / v) solution for 15 minutes to remove oxides on the surface of the substrate, then rinse with deionized water for 2 minutes, and finally blow dry with nitrogen, put it in a metal organic compound coating machine, and vacuumize to 1×10 -3 Pa; with TMGa (trimethylgallium), TMA1 (trimethylaluminum) and NH 3 (Ammonia gas) was used as gallium source, aluminum source and ammonia source respectively, and the V / III ratio was 1100. Under the conditions of 1100°C and growth pressure of 500Torr., Al with a thickness of 5nm was grown X Ga 1-X N intermediate transition layer. After the coating is finished, the temperature is lowered, and high-purity nitrogen is filled to atmospheric pres...

Embodiment 2

[0052] Example 2, Preparation of surface acoustic wave devices by depositing doped zinc oxide on 6H-SiC single crystal substrate

[0053] 1) Clean the 6H-SiC single crystal substrate (thickness 500μm) with acetone, alcohol and deionized water for 4-8 minutes, and then immerse the substrate in HF:H 2 O (1:10, v / v) solution for 15 minutes to remove oxides on the surface of the substrate, then rinse with deionized water for 2 minutes, and finally blow dry with nitrogen, put it in a metal organic compound coating machine, and vacuumize to 1×10 -3 Pa; with TMGa (trimethylgallium) and NH 3 (ammonia) as gallium and ammonia sources for the GaN epitaxial layer, respectively. The V / III ratio was 1100. Under the conditions of 1100° C. and a growth pressure of 500 Torr., a GaN intermediate transition layer with a thickness of 10 nm is grown. After the coating is finished, the temperature is lowered, and high-purity nitrogen is filled to atmospheric pressure. Open the cavity and take ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a surface acoustic wave device based on a silicon carbide substrate / a zinc oxide or doped zinc oxide film, and a preparation method thereof. The structure of the device comprises the silicon carbide substrate, an intermediate transition layer located on the silicon carbide substrate, a piezoelectric layer on the intermediate transition layer, and an interdigital electrode on the piezoelectric layer; the piezoelectric layer is made of zinc oxide or doped zinc oxide; and the interdigital electrode comprises a metal substrate layer located on the piezoelectric layer and ametal main body layer located on the metal substrate layer. The surface acoustic wave device uses the silicon carbide substrate as the substrate, a thin aluminum gallium nitride intermediate transition layer is introduced between the silicon carbide substrate and the (doped zinc oxide) thin film, and a high-quality smooth epitaxy (doped) zinc oxide film is grown by precisely controlling the growthconditions. The surface acoustic wave device disclosed by the invention has the advantages of simple process steps and low cost, and the manufactured surface acoustic wave device has high center frequency, high power endurance, small temperature coefficient, and has huge application in the field of high frequency, high power and low temperature coefficient.

Description

technical field [0001] The invention belongs to the technical field of information electronic materials, and specifically relates to a surface acoustic wave device based on a silicon carbide single crystal substrate with high sound velocity, high thermal conductivity and low temperature coefficient, high resistance and piezoelectricity (doped) zinc oxide thin film and a preparation method thereof. Background technique [0002] With the rapid growth of the wireless communication market in the past few decades, SAW filters have been greatly developed. At the same time, great advances in semiconductor planar technology, material science, and microelectronics technology have enabled other types of SAW devices, such as various sensors, actuators, and microfluidic devices, to be used in remote control telemetry, aerospace, medical testing, and smart homes. It has also been widely used. [0003] Traditional surface acoustic wave devices are fabricated on lithium tantalate, lithium...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H03H9/25H03H3/10
CPCH03H3/10H03H9/25
Inventor 潘峰李起曾飞王为标宋成傅肃磊
Owner TSINGHUA UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com