Stress silicon detector for C band and making method thereof

Abstract

The invention provides a stress silicon detector for the C band and a making method thereof. The stress silicon detector includes a silicon dioxide layer arranged on a back substrate, and a stress mono-crystalline silicon absorption layer and a silicon waveguide layer arranged in the silicon dioxide layer. The stress mono-crystalline silicon absorption layer is connected to the upper end of the silicon waveguide layer. The stress mono-crystalline silicon absorption layer is formed by applying a tensile stress to an amorphous silicon film through the silicon waveguide layer and the silicon dioxide layer. The silicon waveguide layer and the stress mono-crystalline silicon absorption layer are respectively connected with electrodes. The lattice constant of silicon can be accurately and effectively increased, and the band gap can be reduced. Therefore, the absorption limit of silicon can be increased reliably, and the silicon detector can work in the C band or even in a greater wavelengthrange.

Description

technical field [0001] The invention relates to the field of photodetectors in photoelectric information, in particular to a stressed silicon detector for C-band and a manufacturing method thereof. Background technique [0002] In recent years, with the rapid development of the Internet of Things, the optical fiber communication system, as an important support of the Internet of Things, has received more attention. In the field of long-distance backbone networks, with the maturity and development of optical transmission technology, there has been an upsurge in the construction of backbone transmission networks worldwide, and the transmission bandwidth and transmission capacity have developed rapidly. [0003] With the development of optical fiber communication systems, the development of optical devices is also facing opportunities and challenges. How to develop optical devices with excellent performance and low price has become the primary problem that people face. Silicon...

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Problems solved by technology

[0004] However, due to the limitation of the band gap of single crystal silicon itself, since the forbidden band width of single crystal silicon is only 1.11eV, the corresponding cut-off light absorption wavelength is 1100nm, which cannot meet the application requirements of the current C-band optical communication. Engineering to extend the absorption limit of silicon materials is of great significance

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