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Method for controlling damping factor of MRAM (Magnetic Random Access Memory) material

A damping factor and system technology, applied in the field of magnetic material growth and time-resolved detection of femtosecond lasers, can solve the problems of complex MRAM device structure and fabrication process, unfavorable for integrated device fabrication, etc., and achieve low power consumption, high thermal stability, The effect of high-speed MRAM read and write

Active Publication Date: 2018-05-08
NANJING UNIV
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  • Application Information

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Problems solved by technology

The typical MRAM device structure and manufacturing process are very complicated, which is not conducive to the manufacture of integrated devices

Method used

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  • Method for controlling damping factor of MRAM (Magnetic Random Access Memory) material
  • Method for controlling damping factor of MRAM (Magnetic Random Access Memory) material
  • Method for controlling damping factor of MRAM (Magnetic Random Access Memory) material

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Embodiment Construction

[0022] In order to achieve the above object, the present invention first prepared the material structure substrate / Ta(5) / CoFeB(1) / MgO(3) / Ta(5) and substrate / Ta(5) / MgO(3) / CoFeB(1) / Ta(5) (the number represents the thickness of the film, the unit is nanometers), such as figure 1 shown. The magnetic film structure has perpendicular magnetic anisotropy, coercive force H C 5.31Oe and 5.66Oe respectively, the saturation magnetization field M S 890emu / cm 3 、836emu / cm 3 ,like figure 2 shown.

[0023] The samples involved in the present invention are grown by magnetron sputtering. First, the surface of the Si substrate is cleaned by blowing the surface of the substrate with a nitrogen stream. The vacuum was maintained at 10 when the sample was sputtered -6 Pa or so.

[0024] In order to complete the above invention, the experimental scheme we adopt is to use the time-resolved magneto-optical Kerr effect means, using such image 3 The experimental system shown.

[0025] The ...

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Abstract

The invention discloses a method for adjusting the damping factor of a CoFeB film through changing the growth sequence of MgO / CoFeB / Ta. The structure is better in perpendicular anisotropy and is goodin adjustability of the damping factor, so the material is a key material which can be used for generating an MRAM (Magnetic Random Access Memory) device. The magnetron sputtering is used for growinga Ta / CoFeB / MgO superthin film and an MgO / CoFeB / Ta superthin film, and a TRMOKE (Time Resolved Magneto-Optical Kerr Effect) is used for testing the damping factor of the material. The damping factor alpha of Ta / CoFeB / MgO is 0.017, and the damping factor of MgO / CoFeB / Ta is 0.027. Because the change of the damping factor is big, the material is very suitable for the increase of the reading and writing speed of the MRAM. The structure of a sample in the invention sequentially consists of a substrate, a buffering layer, a magnetic layer, and a coverage layer. The repetition frequency of femtosecondpulse laser is 1000Hz, the pulse width is 50fs, and the pumping power density is 3.54mJ / cm2.

Description

Technical field: [0001] The invention belongs to the cross field of the combination of magnetic material and optical technology measurement. It specifically involves the growth of magnetic materials and the time-resolved detection of femtosecond lasers. The main feature is that the damping factor changes significantly when the magnetic properties of the material are basically unchanged, and it can be applied to magnetic random access memory and low-power sensors. Background technique: [0002] Magnetic Random Access Memory (MRAM) is a non-volatile memory. It has many obvious advantages: high integrated storage density, high-speed read and write capabilities, nearly infinite repeatable read and write times, low power consumption and high radiation resistance, and the most prominent non-volatility. Typical MRAM device structures and manufacturing processes are very complex, which is not conducive to the manufacture of integrated devices. [0003] At present, there are many r...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R33/12G11B5/62
CPCG11B5/62G01R33/1215
Inventor 徐永兵黄大威阮学忠
Owner NANJING UNIV
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