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A kind of zn-sb-bi film material and preparation method thereof for multi-state phase change memory

A phase change memory, zn-sb-bi technology, applied in the field of phase change materials for information storage, can solve the problems of high energy, high power consumption, material stability and loss of phase change ability, etc., to reduce chemical bond energy, large crystal state Resistor, realize the effect of multi-bit multi-value storage

Active Publication Date: 2021-05-18
NINGBO UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, if the crystallization temperature is too high, the material will lose its phase transition ability due to its good stability, and the energy required to be applied is too high, resulting in excessive power consumption.

Method used

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  • A kind of zn-sb-bi film material and preparation method thereof for multi-state phase change memory
  • A kind of zn-sb-bi film material and preparation method thereof for multi-state phase change memory
  • A kind of zn-sb-bi film material and preparation method thereof for multi-state phase change memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] In the magnetron sputtering coating system, the quartz sheet or silicon oxide sheet is used as the substrate, the metal Bi single target is installed in the magnetron DC sputtering target, and the Zn 2 Sb 3 The alloy target is installed in the magnetron radio frequency sputtering target, and the sputtering chamber of the magnetron sputtering coating system is vacuumed until the vacuum degree of the chamber reaches 5.6×10 -4 Pa, and then pass high-purity argon gas with a volume flow rate of 50ml / min into the sputtering chamber until the air pressure in the sputtering chamber reaches the initiation pressure of 0.3 Pa required for sputtering, and then fix the Zn 2 Sb 3 The sputtering power of the target is 50 W, and the sputtering power of the metal Bi single target is adjusted to 0 W. The double target co-sputters the film at room temperature. After the sputtering thickness reaches 250 nm, the Zn-Sb phase change film in the deposited state is obtained. material whose ch...

Embodiment 2

[0026] The same as the first embodiment above, the difference is: during the sputtering process, the sputtering power of the metal Bi single target is controlled to 1 W, and the Zn 2 Sb 3 The sputtering power of the alloy target is 50 W, and the double-target co-sputtering coating is carried out at room temperature. After the sputtering thickness is 250 nm, the as-deposited Zn-Sb-Bi phase-change thin film material is obtained, and its chemical structure is (Zn 2 Sb3 ) 96.8 Bi 3.2 .

[0027] The prepared thin film material is carried out in-situ resistance and XRD test, find out that the performance index of the thin film prepared in this embodiment is as follows: crystallization temperature T c It is 229 ℃, the phase transition temperature is 320 ℃, the crystallization activation energy is 2.14 eV, the ten-year data retention temperature is 119 ℃, and it has 3 kinds of resistance states.

Embodiment 3

[0029] Same as the first embodiment above, the difference is: during the sputtering process, the sputtering power of the metal Bi single target is controlled to 2 W, and the Zn 2 Sb 3 The sputtering power of the alloy target is 50 W, and the double-target co-sputtering coating is carried out at room temperature. After the sputtering thickness is 250 nm, the deposited Zn-Sb-Bi thin film material is obtained, and its chemical structure is (Zn 2 Sb 3 ) 94.6 Bi 5.4 .

[0030] The prepared thin film material is carried out in-situ resistance and XRD test, find out that the performance index of the thin film prepared in this embodiment is as follows: crystallization temperature T c It is 163 ℃ and has 4 kinds of resistance states.

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Abstract

The invention discloses a Zn-Sb-Bi thin film material for multi-state phase change memory and a preparation method thereof, which is characterized in that the thin film material is composed of metal single substance Bi target and Zn 2 Sb 3 The alloy target is obtained by double-target co-sputtering in the magnetron sputtering coating system, and its chemical structure is (Zn 2 Sb 3 ) 100‑x Bi x , where 0≤x<14, among which the phase change material Zn is preferred 2 Sb 3 and (Zn 2 Sb 3 ) 96.8 Bi 3.2 It has higher crystallization temperature, larger crystallization activation energy and stronger ten-year data retention. Compared with traditional three-state GST phase change materials, the three-state phase change memory material has higher crystallization temperature and phase transition temperature. , and the crystalline resistance is larger, with 3 resistance states, while other Zn-Sb-Bi films with higher Bi content exhibit 4 resistance states, which can achieve higher multi-bit multi-value storage.

Description

technical field [0001] The invention belongs to the field of phase-change materials for information storage, and in particular relates to a Zn-Sb-Bi film material for multi-state phase-change memory and a preparation method thereof. Background technique [0002] Phase-change memory technology (PCM) is a technology in which the reflectivity / resistivity of phase-change materials can be reversibly changed between amorphous and crystalline states under the action of external light / electric pulses to achieve information storage. It is compatible with the existing integrated circuit semiconductor process (CMOS), and has a long cycle life (greater than 10 12 ), fast read / write speed (20 ns / 10 ns), and little environmental impact, it is widely used in phase change memory. Nowadays, device size reduction is becoming more and more complicated and difficult, and storing multiple data in one device unit is an effective method to increase storage density, so the research on multi-bit st...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/231H10N70/881H10N70/026
Inventor 王国祥师道田刘鹏沈祥聂秋华吕业刚
Owner NINGBO UNIV
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