Thermal field for aluminum nitride crystal growth furnace

Abstract

The invention discloses a thermal field for an aluminum nitride crystal growth furnace. The growth furnace comprises a furnace body and a support rod penetrating through the lower part of the furnacebody, the thermal field comprises a crucible arranged above the support rod, a thermal insulation mechanism as well as multistage heating mechanisms sequentially distributed in the vertical directionin the furnace body and used for heating the crucible, and the thermal insulation mechanism comprises a first thermal insulation screen, a second thermal insulation screen arranged between the crucible and the support rod, a third thermal insulation screen arranged on the outer side of the crucible in a surrounding manner as well as a fourth thermal insulating screen arranged between the third thermal insulation screen and the inner wall of the furnace body in a surrounding manner. The thermal field for the aluminum nitride crystal growth furnace is made of tungsten and boron nitride materials, so that impurity effects of oxygen and carbon impurities in the graphite thermal field on crystal growth are effectively prevented; the temperatures of the top end and the bottom end of the cruciblecan be flexibly regulated by the aid of the multistage heating mechanisms; by means of the movable support rod, the temperature gradient for crystal growth can be controlled conveniently, the crucible can be taken out conveniently, and thus, a furnace chamber can be cleaned.

Description

technical field [0001] The invention relates to a thermal field for an aluminum nitride crystal growth furnace. Background technique [0002] Conductor materials are widely used in integrated circuits, LED fields, military, communications and other fields. As a fourth-generation new semiconductor material, aluminum nitride has a wide bandgap (6.2ev), high thermal conductivity, high electron saturation mobility, and high breakdown. Field strength, radiation resistance and other properties are currently used in the manufacture of high-power, high-frequency and other electronic devices, and have great application prospects in aerospace, ocean exploration, ultraviolet curing, solid-state lighting and other fields. [0003] The aluminum nitride single crystal manufacturing process is very difficult, especially for large-scale high-quality single wafers. The commonly used method for preparing aluminum nitride single crystal is the physical vapor transport method (PVT method), and...

AI Technical Summary

Problems solved by technology

The graphite thermal field that is often used at present, due to the heat preservation problem and the use of graphite materials, many impurities such as oxygen and carbon will be introduced, and the impurities will contaminate the crystal and affect the quality of the crystal.

And the replacement of the graphite thermal field system is more frequent, which increases the cost

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