Novel device for measuring magnetic field intensity and preparation method thereof, and application of novel device for measuring magnetic field intensity

Abstract

The present invention belongs to the field of composite material technology, and specially relates to a novel device for measuring magnetic field intensity and a preparation method thereof, and an application of a novel device for measuring magnetic field intensity. The objective of the invention is to provide a novel device for measuring magnetic field intensity and a preparation method thereof,and an application of a novel device for measuring magnetic field intensity. The novel device for measuring magnetic field intensity employs a traditional chemical method to synthesize ferroferric oxide / organic core-shell structure composite materials, employs deionized water, absolute ethyl alcohol and acetone to perform multi-times stirring and cleaning to remove ions and organic matters remained in the ferroferric oxide / organic core-shell structure composite materials, employs strong magnets to collect materials, puts the materials into an environment with a room temperature to dry for 5 hours, performs tabletting and cutting of the dried powder to prepare a required shape of a device, and prepares an electrode to complete preparation of the device. The resistivity of the device preparing the materials is large, the external resistances of a connection port and a wire can be neglected by contrast, and therefore, the measurement precision is improved.

Description

technical field [0001] The invention belongs to the technical field of composite materials, and in particular relates to a novel device for measuring magnetic field strength, a preparation method and an application. Background technique [0002] Currently, a common way to measure the magnetic field strength is to use a Gauss meter (also known as a Tesla meter). The Hall probe of the Gauss meter is a device for measuring the magnetic field strength made according to the principle of the Hall effect, and consists of a Hall probe and a measuring instrument. The Hall probe generates a Hall voltage in a magnetic field, measures the Hall voltage and determines the measured magnetic field strength according to the Hall voltage formula and the known Hall coefficient. First of all, due to the small value of the Hall voltage, the accuracy and sensitivity of the gauss meter with a large range are low. In order to achieve high sensitivity, some Hall elements are equipped with Permallo...

AI Technical Summary

Problems solved by technology

The Hall potential of this type of sensor is relatively large, but it saturates at around 0.05T, which is only suitable for use in low limit and small range

Secondly, when measuring the magnetic field with a gauss meter, due to the low potential of the Hall probe, the resistance of the external interface and wires connecting the circuit will affect the accuracy of the measurement results

Finally, the semiconductor materials generally used to make Hall probes mainly include germanium, silicon, gallium arsenide, indium arsenide, indium antimonide, etc. Some materials (such as indium antimonide) have a narrow band gap, and the working temperature range Small, and the concentration of carriers in semiconductors changes exponentially with temperature, which will affect the Hall coefficient and Hall voltage

At present, the influence of temperature on the measurement results is not considered in the measurement results of many Gaussmeters, which will cause different results measured for the same magnetic field at different temperatures, and the measurement consistency is low.

Images