Fabrication method of Sb2S3-based full-inorganic thin film solar cell

Abstract

The invention discloses a fabrication method of a Sb2S3-based full-inorganic thin film solar cell. The fabrication method comprises the steps of firstly, fabricating a layer of compact TiO2 thin filmon an FTO by employing a sol-gel method; secondly, depositing a Sb2S3 thin film by thermal evaporation after annealing of the TiO2 thin film, and performing surface vulcanization and simultaneously performing annealing on the Sb2S3 thin film by employing thioacetamide; and finally, transferring a graphene thin film grown by a chemical vapor deposition method to the Sb2S3 thin film to form a TiO2 / Sb2S3 / Gr thin film structure. The device obtains an open-circuit light voltage being 560mV, a short-circuit light current being 6.8 mA / cm<2> and photoelectric conversion efficiency being 1.17% under simulation sunlight source irradiation of 100 mW / cm<2> in a room temperature. Graphene is used as a hole transmission layer and a transparent conductive electrode of the Sb2S3-based solar cell, thus, the Sb2S3-based solar cell is low in cost and is simple to fabricate; and compared with the Sb2S3-based solar cells mostly employing organic hole transmission holes, the Sb2S3-based full-inorganic thinfilm solar cell has more stable device performance.

Description

technical field [0001] The invention relates to a novel antimony sulfide-based all-inorganic thin-film solar cell and a preparation method thereof, belonging to the field of manufacturing technology of inorganic non-metallic material devices. technical background [0002] With the increasing environmental pollution and energy shortage, human beings are looking for renewable energy to replace or supplement conventional primary energy (such as oil, coal, etc.). As a clean and renewable energy source, solar energy is considered to be one of the most effective ways to solve the energy crisis and environmental pollution. Since the advent of solar cells, it has experienced the first generation of crystalline silicon solar cells, the second generation of thin film solar cells, the third generation of new concept solar cells and the fourth generation of composite thin film solar cells. Although solar cell research technology has been developed rapidly, silicon-based solar cells sti...

AI Technical Summary

Problems solved by technology

For example, the preparation method of antimony sulfide thin film is still relatively scarce. At present, the chemical bath deposition method is generally used to prepare antimony sulfide thin film by preparing a solution containing sulfur and antimony compounds. This method has a lower preparation temperature, so that the antimony sulfide thin film is mostly amorphous. , agglomeration is prone to occur during the annealing process; current research mainly focuses on antimony sulfide sensitized titanium dioxide nanostructure solar cells, most of which use organic hole transport material layers, making the battery stability poor

However, the inorganic hole transport layer only has cuprous thiocyanide or a very small number of p-type semiconductors, which limits the application of antimony sulfide in all-inorganic thin-film batteries.

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