A device for reversibly regulating the magnetic properties of graphene oxide by using electric pulses and its preparation method

A technology of electric pulse and graphene, which is applied in the field of graphene oxide preparation, can solve the problems of low magnetism and inconvenient regulation of graphene oxide magnetism, and achieve the effect of promoting substantial improvement, realizing reversible regulation, and magnetic enhancement

Active Publication Date: 2020-04-21
HEBEI NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Aiming at the problems of inconvenient regulation and low magnetic properties of existing graphene oxide, the present invention provides a device for realizing reversible regulation of graphene oxide magnetism by using electric pulses

Method used

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Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0033] In any embodiment, the preparation method at least includes the following steps:

[0034] Step 1, using a spin coating method to prepare a dielectric layer;

[0035] Step 2, using a magnetron sputtering method to prepare a top electrode on the dielectric layer to obtain a device based on electric pulse excitation of graphene magnetism;

[0036] Step 3: Excite the device prepared in step 2 with electric pulses, and under the alternating action of negative / positive pulses, the magnetic properties of the dielectric layer can be reversibly changed to increase or decrease.

[0037] This method introduces additional oxygen into the GO film by using an oxide electrode or inserting an oxide intercalation layer, and using the electric pulse excitation, through the SP 2 / SP 3 The transformation can promote a substantial increase in the number of oxygen-containing groups in the GO film, thereby effectively improving the ferromagnetism of the film. The method is simple and effect...

Embodiment 1

[0045] This embodiment provides a device that utilizes electric pulses to realize the reversible magnetic regulation of graphene oxide, and the device includes a second bottom electrode Pt, a top electrode Au, and graphene oxide between the second bottom electrode Pt / top electrode Au ( Gadolinium oxide (Gd) between the dielectric layer and the dielectric layer / second bottom electrode 2 o 3 ) oxygen storage intercalation. The film thickness of the GO dielectric layer is 50nm, and the thickness of the top electrode Au layer is 100nm. The preparation method comprises the following steps:

[0046] Step 1, using pulsed laser deposition method (PLD) to prepare Gd on the second bottom electrode Pt 2 o 3 Oxygen storage intercalation;

[0047] Wherein, the second bottom electrode Pt is a commercial Pt / Ti / SiO 2 / Si substrate; the Gd 2 o 3 The thickness of the oxygen storage intercalation film is 20nm;

[0048] Step 2, utilizing the spin coating method on Gd 2 o 3 Preparation o...

Embodiment 2

[0055] This embodiment provides a device that uses electric pulses to achieve reversible magnetic regulation of graphene oxide. The device includes a second bottom electrode Pt, a top electrode Au, a GO dielectric layer between the second bottom electrode Pt / top electrode Au, and Gd between dielectric layer / second bottom electrode 2 o 3 Oxygen storage intercalation. The film thickness of the GO dielectric layer is 80nm, Gd 2 o 3 The thickness of the oxygen storage intercalation film is 15nm.

[0056] The preparation method of the device using electric pulses to realize the reversible control of graphene oxide magnetism, specifically the pulse intensity of the electric pulse is 0.6V, the pulse width is 2ms, the current limit is 100mA, the current limit is 100mA, other steps are as described in Example 1, No longer.

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Abstract

The invention relates to the technical field of graphene oxide preparation, and specifically discloses a device for realizing reversible magnetic regulation of graphene oxide by using electric pulses and a preparation method thereof. The present invention provides oxygen ions with a conductive oxide electrode rich in oxygen ions or a non-magnetic oxide oxygen storage layer, and stimulates the direction of oxygen migration by applying positive / negative electric pulses, so that the graphene oxide dielectric layer undergoes oxygen absorption oxidation or deoxidation Reduction reaction, the number of oxygen-containing groups in the dielectric layer increases or decreases significantly, and the magnetic properties show alternating changes of strong and weak, thereby realizing the reversible regulation of the magnetic properties of the graphene oxide film. Compared with traditional preparation methods, once graphene oxide is prepared, its magnetic properties cannot be conveniently adjusted. The preparation method provided by the invention is fast, simple and effective, and provides a new approach for regulating the magnetic properties of graphene oxide.

Description

technical field [0001] The invention relates to the technical field of graphene oxide preparation, in particular to a device and a preparation method for reversibly regulating the magnetic properties of graphene oxide by using electric pulses. Background technique [0002] The unique structure of graphene endows it with good room temperature electron mobility, high thermal conductivity, optical transparency, and superior mechanical properties. It has broad application prospects in the fields of sensors, batteries, supercapacitors, and energy equipment. world attention. However, conventional graphene has no band gap and no magnetism, which limits its application in the semiconductor industry and spintronic devices. [0003] Unlike graphene, graphene oxide (GO) obtained by oxidation of graphene exhibits semiconducting properties due to functional groups such as hydroxyl, epoxy, and carboxyl, and can also be magnetic. In order to obtain the magnetic properties of GO, people u...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/10H01L43/12
CPCH10N50/85H10N50/01
Inventor 陈伟任书霞郭家俊康鑫张莉马欢张新娜
Owner HEBEI NORMAL UNIV
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