Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

TFT substrate, manufacturing method thereof, OLED panel and manufacturing method thereof

A manufacturing method and substrate technology, applied in semiconductor/solid-state device manufacturing, electrical components, diodes, etc., can solve problems such as unsatisfactory requirements, and achieve the effect of improving work stability, performance stability, and good luminous stability

Active Publication Date: 2018-02-13
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
View PDF7 Cites 19 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, with the development of liquid crystal display devices and OLED display devices towards large size and high resolution, conventional a-Si is only 1cm 2 Mobility around / (Vs) can no longer meet the requirements, and metal oxide materials represented by indium gallium zinc oxide (IGZO) have a mobility of more than 10cm 2 Mobility above / (Vs), and the preparation of corresponding thin-film transistors are well compatible with the existing a-Si semiconductor-driven thin-film transistor production lines. In recent years, they have rapidly become the focus of research and development in the display field.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • TFT substrate, manufacturing method thereof, OLED panel and manufacturing method thereof
  • TFT substrate, manufacturing method thereof, OLED panel and manufacturing method thereof
  • TFT substrate, manufacturing method thereof, OLED panel and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0057] In order to further illustrate the technical means adopted by the present invention and its effects, the following describes in detail in conjunction with preferred embodiments of the present invention and accompanying drawings.

[0058] see figure 1 , the invention provides a kind of manufacturing method of TFT substrate, comprises the following steps:

[0059] Step 1, such as figure 2 As shown, a base substrate 10 is provided, a light-shielding layer 20 is formed on the base substrate 10, a buffer layer 30 covering the light-shielding layer 20 is formed on the base substrate 10, and a buffer layer 30 is formed on the buffer layer 30. Corresponding to the active layer 40 above the light shielding layer 20 , the material of the active layer 40 is a metal oxide semiconductor material.

[0060] Specifically, before the light-shielding layer 20 is fabricated, the base substrate 10 also needs to be cleaned.

[0061] Specifically, the light-shielding layer 20 is obtained...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a TFT substrate, a manufacturing method thereof, an OLED panel and a manufacturing method thereof. The manufacturing method of the TFT substrate includes: forming a first interlayer insulating layer covering a grid and an active layer on a buffer layer, wherein the first interlayer insulating layer is made of silicon oxynitride and can protect copper on the surface of the grid from being oxidized, guarantee the performance stability of the grid and prevent excessive hydrogen from being guided into the active layer; forming a second interlayer insulating layer on the first interlayer insulating layer, wherein the second interlayer insulating layer is made of silicon oxide and can prevent excessive hydrogen from being guided into the active layer, guarantee the performance stability of the active layer and increase the work stability of a TFT device. The TFT substrate manufactured by the method has the advantages that the grid and the active layer of the TFT substrate are stable in performance, and the TFT device is high in work stability.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a TFT substrate and a manufacturing method thereof, an OLED panel and a manufacturing method thereof. Background technique [0002] Liquid crystal display (Liquid Crystal Display, LCD) has many advantages such as thin body, power saving, no radiation, etc., and has been widely used, such as: mobile phone, personal digital assistant (PDA), digital camera, computer screen or notebook computer screen etc. [0003] Organic light-emitting diode (Organic Light-Emitting Diode, OLED) display, also known as organic electroluminescent display, is a new type of flat panel display device, due to its simple preparation process, low cost, low power consumption, high luminance, Wide range of working temperature, light and thin size, fast response speed, easy to realize color display and large-screen display, easy to realize matching with integrated circuit driver, easy to realize flexible dis...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/77H01L27/12H01L27/32
CPCH01L27/1225H01L27/1248H01L27/1259H10K59/124H01L29/78633H01L29/7869H01L29/78618H01L29/66969H10K59/126H10K59/1213H01L21/77H01L2021/775H01L27/1214H10K59/32
Inventor 刘兆松徐源竣
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com