High Denstiy Capacitors Formed From Thin Vertical Semiconductor Structures Such As Finfets

Abstract

A vertical structure may be manufactured in a substrate of an integrated circuit, and that vertical structure used to form a high density capacitance for the integrated circuit. These thin vertical structures can be configured to operate as an insulator in a capacitor. The vertical structures may be manufactured using three-dimensional semiconductor manufacturing technology, such as FinFET (fin field effect transistor) technology and manufacturing processes. The capacitors based on thin vertical structures may be integrated with other circuitry that can utilize the thin vertical structures, such as FinFET transistors.

Description

[0001] Cross references to related patent applications [0002] This application claims the benefit of priority to U.S. Provisional Patent Application No. 62 / 158,892 to Zhonghai Shi et al., filed May 8, 2015, and entitled "Methods and Implementations for using FinFET Technology to Make High Density Capacitors," which is adopted by incorporated herein by reference. technical field [0003] The present disclosure relates to the manufacture of integrated circuits. More specifically, portions of this disclosure relate to fabricating capacitors integrated with integrated circuits. Background technique [0004] Capacitors are important components of many electronic devices and especially mixed-signal circuits that handle analog and digital circuits. The capacitor can be fabricated separately from the integrated circuit (IC) and then coupled to the integrated circuit (IC) as an external capacitor. Capacitors can also be integrated into the IC. Compared to external capacitors, i...

AI Technical Summary

Problems solved by technology

The capacitance provided by conventional planar MIM capacitors, such as the capacitor of Figure 1, limits the density of circuits including integrated capacitors on a substrate

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