Intercalation molybdenum oxide single crystal film as well as preparation method and purpose thereof

Abstract

The invention discloses an intercalation molybdenum oxide single crystal film as well as a preparation method and a purpose thereof. The method comprises the following steps of heating molybdenum trioxide powder to be 580 to 880 DEG C in atmospheric environment; maintaining the state for not less than 1 hour; then, cooling the materials to 350 to 550 DEG C; performing collection by a substrate toobtain a molybdenum oxide single crystal sheet; dissolving SnCl2 into de-ionized water; adding the molybdenum oxide single crystal sheet; heating the reaction system to be 30 to 90 DEG C; performing reaction for 10 to 180 min; washing a product to obtain a suspension; treating the suspension by a suction filtration method or dispersing the suspension onto the required substrate to obtain the intercalation molybdenum oxide single crystal film. The ion intercalation method is used for intercalating Sn<4+> metal ions into MoO3 interlayer Van der Waals gaps; the between-band state is obviously expanded under the condition of avoiding the oxygen vacancy generation; the conductivity of the MoO3 is obviously improved; the light response range of the MoO3 is expanded, so that the response to ultraviolet light, visible light and near infrared light are realized.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronic materials, and in particular relates to an intercalated molybdenum oxide single crystal film and its preparation method and application. Background technique [0002] The two-dimensional layered semiconductor molybdenum oxide material has a high dielectric constant and can effectively suppress the Coulomb scattering of carriers, so the material has a particularly high carrier mobility. In 2013, S Balendhran et al. measured the field-effect mobility of carriers in this type of material from the laboratory, and its value reached 1100cm 2 / Vs. In 2017, WB Zhang et al. further predicted layered MoO 3 The theoretical carrier mobility at room temperature can be as high as 3000 cm 2 / Vs, this value is at least an order of magnitude higher than common oxide materials, comparable to semiconductor Si materials. [0003] The two-dimensional molybdenum oxide material also has a band gap of >...

AI Technical Summary

Problems solved by technology

[0005] However, the above methods all destroy the lattice structure of the material, resulting in oxygen vacancy defects

The generation of oxygen vacancy defects leads to the material's response to H 2 O, O 2 Sensitive, so the light, heat and atmosphere stability of the device are greatly reduced, and it cannot work stably in the atmospheric environment

Although the device can work in a vacuum environment, the appearance of oxygen vacancies in a vacuum environment also leads to a significant increase in the response time of the device to the order of tens to hundreds of seconds.

Finally, small ions such as implanted H and Li have high mobility in the oxide, and can move under the action of an electric field, resulting in the precipitation of ions and the rapid failure of the material.

Therefore, the existing methods cannot achieve the broadening of the material response band, the improvement of device stability and the improvement of response speed at the same time.

Images