Black phosphorus-based p-n photoelectric detector

Abstract

The invention discloses a black phosphorus-based p-n photoelectric detector. The black phosphorus-based p-n photoelectric detector comprises a substrate, a masked oxide layer positioned on the substrate and an active region structure positioned on the masked oxide layer; the source region structure comprises a source, a drain, and a gate which consists of black phosphorus (BP) and polydimethylsiloxane (PDMS); the substrate is a P type substrate; the masked oxide layer adopts the material of SiO<2> with thickness of 50nm; by applying stretched or compressed polydimethylsiloxane (PDMS), different strains are introduced to the black phosphorus (BP) in the zigzag shape and handrail chair directions to be placed on the top of the masked oxide layer; the number of the black phosphorus (BP) layers is five; the source and the drain are in contact, and electron beam photoetching definition can be performed by poly-methyl methacrylate (PMMA); the electrode material is selected from Ti and Au; and a voltage regulation device can be applied to the substrate. The BP-based p-n photoelectric detector is designed and simulated; and by analyzing the black phosphorus and the energy structure in different strain directions and by considering a dark current effect, absorption coefficient and responsivity of the system are optimized, and the responsivity can be as high as 66.29A / W.

Description

technical field [0001] The invention relates to the technical field of optoelectronic devices, in particular to a photodetector device prepared based on black phosphorus (BP). Background technique [0002] In recent years, photodetectors related to optoelectronic technology have developed rapidly, and more and more materials have been applied to the research of detectors. As we all know, the commonly used photodetection materials in near-infrared spectroscopy are mainly Ge with a high absorption coefficient. However, Ge cannot cover the entire L-band (1565–1625 nm), and even introduces in-plane tensile strain. As another group of substitutes, GeSn alloy can adjust the bandgap by adjusting the content of Sn or introducing strain, which can extend the optical communication band to the U band (1625-1675nm), and even has good responsivity at 2000nm. However, they can only be applied in the near-infrared range, and neither can further extend the cut-off wavelength in the entire...

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Problems solved by technology

However, they can only be applied in the near-infrared range, and neither can further extend the cut-off wavelength in the entire mid-infrared (MIR) range

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