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Method and system for assisting chemical vapor deposition to prepare DLC thin film through energy-loaded ionization atomic cluster

A technology of chemical vapor deposition and atomic clusters, which is applied in the field of diamond-like film preparation, can solve the problems of DLC film compactness enhancement technology, achieve broad industrialization prospects, reduce surface roughness and surface friction coefficient, and improve film /base binding effect

Inactive Publication Date: 2018-01-05
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This makes the application of ionized atomic groups mainly limited to surface modification processes such as material surface planarization, but there is no related report on the densification enhancement technology of DLC thin films prepared by using energy-carrying ionized atomic group beams.

Method used

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  • Method and system for assisting chemical vapor deposition to prepare DLC thin film through energy-loaded ionization atomic cluster
  • Method and system for assisting chemical vapor deposition to prepare DLC thin film through energy-loaded ionization atomic cluster
  • Method and system for assisting chemical vapor deposition to prepare DLC thin film through energy-loaded ionization atomic cluster

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] In this example, see figure 1 , an enhanced PECVD system, comprising a rear cavity device and a front cavity device, the rear cavity device is an energy-carrying ionization atomic cluster beam excitation system, the front cavity device is a PECVD system, and the energy-carrying ionization atomic cluster beam excitation system is The cavity of the ionized atomic cluster beam excitation system is connected with the inner cavity of the PECVD system to form a system integrated body cavity. A vacuum connection system is set between the two systems of the energy-carrying ionization atomic cluster beam excitation system and the PECVD system. The vacuum connection system can be used to integrate the system. The vacuum degree of the body cavity is adjusted and controlled. In the system complex body cavity, a baffle is set between the ionized atomic cluster beam excitation system cavity of the energy-carrying ionized atomic cluster beam excitation system and the inner cavity of th...

Embodiment 2

[0058] This embodiment is basically the same as Embodiment 1, especially in that:

[0059] In this embodiment, the substrate temperature is set at 100° C., the accelerating voltage of the ionized radical beam is 3000 V, and the DLC film is prepared by composite PECVD.

[0060] In this embodiment, the same method as that in Embodiment 1 is used to place the substrate on the workpiece holder and bombard and clean the substrate with the energy-carrying ionized atomic cluster beam. Set the substrate temperature to 100 °C. Set the accelerating voltage of the energy-carrying ionizing radical beam excitation system to 3000V, then turn on the PECVD deposition device, and coat the film for 2 hours, with a DLC film thickness of 1 μm.

[0061] Experimental test analysis:

[0062] Example 2 The nanoindentation hardness of the DLC film was tested using the same method and parameters as in Example 1. The test results show that the DLC film prepared in Example 2 has a hardness of 15GPa an...

Embodiment 3

[0064] This embodiment is basically the same as the previous embodiment, and the special features are:

[0065] In this embodiment, the substrate temperature is set at 100° C., the accelerating voltage of the ionized radical beam is 9000 V, and the DLC film is prepared by composite PECVD.

[0066] In this embodiment, the same process steps as in the first embodiment are used to pretreat the surface of the substrate and prepare the DLC film, the temperature of the substrate is set to 100° C., but the accelerating voltage is adjusted to 9000 V, and the thickness of the DLC film is 1 μm.

[0067] Experimental test analysis:

[0068] Example 3 The nanoindentation hardness of the DLC film was tested using the same method and parameters as in Example 1. The test results show that the DLC film prepared in Example 3 has a hardness of 35GPa and an elastic modulus of 140GPa.

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Abstract

The invention discloses a method and system for assisting chemical vapor deposition to prepare a DLC thin film through an energy-loaded ionization atomic cluster. The method comprises the steps that an inorganic or organic base plate is used as a base bottom, and before thin film deposition, the base bottom is sputter-cleaned, activated and flattened by using the energy-loaded ionization atomic cluster; and the DLC thin film is deposited on the surface of the base plate by using a PECVD method, meanwhile, the deposited DLC thin film is bombarded by using the energy-loaded ionization atomic cluster, and the highly-condensed DLC thin film is obtained. By means of the method, the density, abrasive resistance, rigidity and film / base binding force of the DLC thin film are greatly improved, thetechnology is easy to control, and the method can be applied toplated diamond thin films on the surafce of various tools and components.

Description

technical field [0001] The invention relates to a method and a device for preparing a diamond-like film, in particular to a method and a device for preparing a DLC film by chemical vapor deposition, which are applied in the technical field of preparing a nanocrystalline composite structure film. Background technique [0002] Carbon materials have played an important role in the development of human beings, and the wide application of carbon materials has promoted the rapid development of industry. In the 20th century, especially after the 1950s, under the background of the great development of science and technology in the world, carbon fibers and their composite materials, diamonds, carbon molecules and carbon microspheres, carbon nanotubes, graphene, etc. have appeared one after another. The properties of these new carbon materials can cover almost all the properties of substances on the earth and even two opposite properties, such as from the hardest to the softest, from ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/27
Inventor 陈益钢黄凯秦文斌陈安瑞
Owner SHANGHAI UNIV
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