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Diffusion connection method of ternary layered ceramic carbon silicide and metallic chromium

A ternary layered, diffusion connection technology, applied in the field of ceramic and metal connection, can solve the problems of inability to synthesize large-sized or complex-shaped bulk materials or components, restrictions and other issues

Active Publication Date: 2018-01-05
ANHUI UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Currently, for Ti 3 SiC 2 The synthesis methods and material properties of ceramics have been extensively and deeply studied, but their practical application is limited due to the inability to synthesize bulk materials or components with large sizes or complex shapes.

Method used

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  • Diffusion connection method of ternary layered ceramic carbon silicide and metallic chromium
  • Diffusion connection method of ternary layered ceramic carbon silicide and metallic chromium

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] Embodiment 1: with Ti 3 SiC 2 Ceramic and metallic chrome for surface treatment, Ti 3 SiC 2 Ceramic and metallic chrome are ground, polished, ultrasonically cleaned. Then the processed Ti 3 SiC 2 Ceramic and metal chromium are installed in a hot-pressed furnace and vacuumized; when the vacuum reaches 5 × 10 -2 Heating starts at Pa. At a temperature of 100°C, a pressure of 20 MPa, and constant pressure for 90 minutes, the metal chromium and Ti were diffusely bonded. 3 SiC 2 ceramics. The loading rate is 5MPa / min. After the connection is completed, slowly lower the temperature of the hot-press furnace under the original vacuum condition, first to 400°C at a rate of 5°C / min, and then stop vacuuming and remove the pressure after cooling to 200°C with the furnace. The microscopic morphology of the interface after connection was observed with a scanning electron microscope, and the interface was well connected without pores, cracks or residual welding lines.

Embodiment 2

[0015] Embodiment 2: with Ti 3 SiC 2 Ceramic and metallic chrome for surface treatment, Ti 3 SiC 2 Ceramic and metallic chrome are ground, polished, ultrasonically cleaned. Then the processed Ti 3 SiC 2 Ceramic and metal chromium are installed in a hot-pressed furnace and vacuumized; when the vacuum reaches 5 × 10 -2 Heating starts at Pa. At a temperature of 1100°C, a pressure of 20MPa, and constant pressure for 60 minutes, the metal chromium and Ti were diffusely bonded. 3 SiC 2 ceramics. The loading rate is 5MPa / min. After the connection is completed, slowly lower the temperature of the hot-press furnace under the original vacuum condition, first to 400°C at a rate of 5°C / min, and then stop vacuuming and remove the pressure after cooling to 200°C with the furnace. The microscopic morphology of the interface after connection was observed with a scanning electron microscope, and the interface was well connected without pores, cracks or residual welding lines.

Embodiment 3

[0016] Embodiment 3: with Ti 3 SiC 2 Ceramic and metallic chrome for surface treatment, Ti 3 SiC 2 Ceramic and metallic chrome are ground, polished, ultrasonically cleaned. Then the processed Ti 3 SiC 2 Ceramic and metal chromium are installed in a hot-pressed furnace and vacuumized; when the vacuum reaches 5 × 10 -2 Heating starts at Pa. Diffusion metal chromium and Ti 3 SiC 2 ceramics. The loading rate is 5MPa / min. After the connection is completed, the temperature of the hot-press furnace is slowly lowered under the original vacuum condition, first at a rate of 5°C / min to 400°C, and then the furnace is cooled to 200°C and then the vacuum is stopped and the pressure is withdrawn. The microscopic morphology of the interface after connection was observed with a scanning electron microscope, and the interface was well connected without pores, cracks or residual welding lines. The joint shear strength reaches 121MPa.

[0017] figure 1 for Ti 3 SiC 2 Interface back...

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Abstract

The invention discloses a diffusion connection method of a ternary layered ceramic carbon silicide and metallic chromium and belongs to the technical field of connection between the ceramic and metal.The method comprises carrying out surface treatment on ternary layered ceramic and metallic chromium, then carrying out grinding, polishing and ultrasonic cleaning, then installing the ternary layered ceramic and metallic chromium in a hot press furnace, vacuumizing the hot press furnace, carrying out heating when the vacuum degree in the hot press furnace is 5*10<-2> Pa, carrying out heat preservation at a temperature of 1000-1200 DEG C under the constant pressure of 20-30 MPa for 30-90min so that the diffusion connection of the ternary layered ceramic and metallic chromium is realized, thencarrying out cooling to 200 DEG C under original vacuum conditions and releasing the pressure. The joint obtained by the method has good interface bonding and satisfies practical application requirements. The method widens a ternary layered ceramic carbon silicide application range.

Description

Technical field: [0001] The invention belongs to the technical field of connecting ceramics and metals, in particular to a ternary layered ceramic titanium silicide (Ti 3 SiC 2 ) Diffusion bonding method with metallic chromium (Cr). Background technique: [0002] Ti 3 SiC 2 It is a new type of machinable ternary layered ceramic material. Research in the Journal of the American Ceramic Society (Journal of the American Ceramic Society 79, 1953 (1996)) shows that it combines many advantages of ceramics and metals, with low density, high modulus, high strength, high electrical conductivity and thermal conductivity. And the characteristics of easy processing, so Ti 3 SiC 2 Ceramics are a new type of structural / functional integrated material that is promising to be used in high-tech fields such as aviation, aerospace, nuclear industry, and electronic information, and is especially suitable as a high-temperature structural material. Currently, for Ti 3 SiC 2 The synthesis ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B37/02
Inventor 尹孝辉高银银国礼杰包全和李申申
Owner ANHUI UNIVERSITY OF TECHNOLOGY
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