Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method of using silicon carbide material, ozone photocatalyst and reactor comprising same

A technology of photocatalytic reactor and photocatalyst, which is applied in the field of waste gas treatment and wastewater, can solve the problems of catalyst instability and low activity, and achieve the effects of low cost, high reactivity and wide sources

Active Publication Date: 2021-04-16
INST OF PROCESS ENG CHINESE ACAD OF SCI +1
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the prior art, the catalyst for coupling treatment of visible light and ozone mainly uses WO 3 、C 3 N 4 and other materials, but there are problems of low activity and unstable catalyst, which should be further studied and improved.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of using silicon carbide material, ozone photocatalyst and reactor comprising same
  • Method of using silicon carbide material, ozone photocatalyst and reactor comprising same
  • Method of using silicon carbide material, ozone photocatalyst and reactor comprising same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] A method for ozone ultraviolet photocatalytic removal of p-hydroxybenzoic acid in organic wastewater, comprising the steps of:

[0052] In a semi-continuous reactor, 400mL of p-hydroxybenzoic acid with an initial concentration of 40mg / L was used as the reaction solution, and an externally illuminated xenon lamp light source was placed vertically above the reactor, and a filter was used to filter out the visible light region so that the light source only emitted Ultraviolet light, the light wavelength range is 190-400nm, and the light intensity is 160mW / cm 2 ;The flow rate of the ozone gas mixture is 100mL / min, and the ozone concentration is 20mg / L; Weigh 80mg of silicon carbide (catalyst) and put it into the reaction solution, the concentration of silicon carbide is 0.2g / L, and turn on the ultraviolet light source after the solid and liquid are fully mixed. At the same time, the ozone mixture was continuously fed into the reactor; the reaction time was 1 hour, and sampl...

Embodiment 2

[0056] A method for removing penicillin (Penicillin G) in medical wastewater by ozone-visible light catalysis, comprising the steps:

[0057] In the continuous reactor, the effective volume of the reaction solution is 150mL, and the initial concentration of penicillin is 36mg / L; a plug-in visible light source is used, silicon carbide is coated and fixed on the inner wall of the cylindrical reactor, and the light wavelength ranges from 420 to 800nm. 130mW / cm 2 , the distance between the outer wall of the light source and the inner wall of the reactor is 1 cm. The flow rate of the ozone mixed gas is 100mL / min, and the ozone concentration is 20mg / L; after the simulated wastewater enters the reactor, the visible light source is turned on and the ozone mixed gas is continuously fed into the reactor at the same time; the flow rate of the wastewater to be treated is adjusted to control the reaction The effective residence time in the device is 1 hour, the concentration of penicillin...

Embodiment 3

[0061] A method for removing oxalic acid in organic waste water with ozone visible light, comprising the steps of:

[0062] A semi-continuous reactor is used, the volume of the reaction solution is 300mL, and the concentration of oxalic acid is 180mg / L; the outer cover type xenon lamp light source is placed vertically above the reactor, and a filter is used to filter out the visible light region, so that the light source only emits visible light. 420~800nm, the light intensity is 490mW / cm 2 The flow velocity of the ozone gas mixture is 100mL / min, and the ozone concentration is 20mg / L; 60mg of silicon carbide is weighed and put into the reaction solution, the catalyst concentration is 0.2g / L, after the solid-liquid is fully mixed, the ultraviolet light source is turned on and simultaneously to the reaction solution The ozone mixture was continuously fed into the container; the reaction time was 1 hour, and samples of different periods were kept, and the concentration of the rea...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a method for using a silicon carbide material, which is used for ozone photocatalytic reaction. The invention uses the silicon carbide material for the ozone photocatalytic reaction, which can overcome the problem of low photocatalytic efficiency of the silicon carbide, utilizes its strong reducibility of photogenerated electrons, reduces ozone molecules to efficiently produce hydroxyl radicals, and improves the oxidation capacity of the treatment process. When visible light or ultraviolet light is coupled with ozone, it has strong catalytic activity, and silicon carbide has low cost and good stability, which prolongs the life of ozone photocatalyst or equipment.

Description

technical field [0001] The invention belongs to the technical field of waste water and waste gas treatment, and specifically relates to the use of silicon carbide as a catalyst for ozone-photocatalytic treatment of waste water and waste gas, and an ozone photocatalyst and an ozone photocatalytic reactor comprising the silicon carbide material. Background technique [0002] Silicon carbide is a semiconductor material with many advantages such as high thermal conductivity, large electron saturation migration rate, high critical breakdown electric field, and low dielectric constant. It is mainly used for LED device substrates, power electronic devices, and RF microwave device linings. substrates, graphene epitaxial substrates and other fields, and has good application prospects in many fields such as communications, power grids, aerospace, oil exploration, national defense and military. In the existing technology, silicon carbide is also used as a catalyst for photocatalytic wa...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C02F1/30C02F1/32C02F1/72C02F1/78B01J27/224C02F103/34C02F101/38C02F101/34C02F101/30
CPCB01D2251/104B01D2255/1021B01D2255/1023B01D2255/1025B01D2255/1026B01D2255/1028B01D2255/104B01D2255/106B01D2255/20707B01D2255/20723B01D2255/2073B01D2255/20738B01D2255/20746B01D2255/20753B01D2255/20761B01D2255/20769B01D2255/20776B01D2255/20784B01D2255/20792B01D2255/2094B01D2255/707B01D2257/708B01D2257/90B01D2257/91B01J27/24B01D2259/804B01J27/224B01J35/004B01D53/007B01D53/8687B01D2255/802B01D2259/802C02F1/78C02F1/725C02F2305/10C02F1/32C02F2103/28C02F2103/343C02F2101/30Y02W10/37C02F1/30C02F2101/34C02F2101/40C02F2101/38B01D2255/70C02F1/325
Inventor 谢勇冰曹宏斌李玉平盛宇星
Owner INST OF PROCESS ENG CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com