Epitaxial structure of ga-face group III nitride, active device, and method for fabricating the same

Abstract

The present invention provides an epitaxial structure of Ga-face group III nitride, its active device, and the method for fabricating the same. The epitaxial structure of Ga-face AlGaN / GaN comprises a substrate, an i-GaN (C-doped) layer on the substrate, an i-Al(y)GaN buffer layer on the i-GaN (C-doped) layer, an i-GaN channel layer on the i-Al(y)GaN buffer layer, and an i-Al(x)GaN layer on the i-GaN channel layer, where x=0.1-0.3 and y=0.05-0.75. By using the p-GaN inverted trapezoidal gate or anode structure in device design, the 2DEG in the epitaxial structure of Ga-face group III nitride below the p-GaN inverted trapezoidal structure will be depleted, and thus fabricating p-GaN gate enhancement-mode (E-mode) AlGaN / GaN high electron mobility transistors (HEMTs), p-GaN anode AlGaN / GaN Schottky barrier diodes (SBDs), or hybrid devices.

Description

technical field [0001] The present invention relates to an epitaxial structure, in particular to a brand-new gallium cleavage surface (Ga-Face) group III / nitride that can block electrons from buffer traps from entering the channel layer (channel layer) A semiconductor series epitaxial structure, and an active element formed by using the epitaxial structure and a manufacturing method thereof. Background technique [0002] In the past known technology, the most common way to achieve enhanced aluminum gallium nitride / gallium nitride (AlGaN / GaN) high-speed electron mobility transistor (E-Mode AlGaN / GaN HEMT) with epitaxial structure is 1. Gallium cleavage surface (Ga-Face) P-type gallium nitride (P-GAN) gate enhanced high-speed electron mobility transistor (P-GaN Gate E-Mode HEMT structure), 2. Nitrogen cleavage surface gallium nitride aluminum gate Extremely enhanced high-speed electron mobility transistor (N-Face Al(x)GaNGate E-Mode HEMT structure), but just as the two compon...

AI Technical Summary

Problems solved by technology

[0003] The most common process method is to use an epitaxial structure, etch away the P-type gallium nitride (P-GAN) outside the gate (Gate) area by dry etching, and try to keep the epitaxial structure of the next layer as much as possible. The integrity of the thickness of the crystal layer, because if the epitaxial layer of the next layer is etched too much, it will cause the two-dimensional electron gas (2-DEG) of the aluminum gallium nitride / gallium nitride (AlGaN / GaN) interface to fail. form

Therefore, the method of dry etching is actually very difficult because: 1. The etching depth is difficult to control, 2. The thickness of each epitaxial layer on the epitaxial chip will still be uneven

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