Thin film transistor substrate, display panel, and laser annealing method

Abstract

The invention discloses a thin film transistor substrate, a display panel, and a laser annealing method, aimed at obtaining a TFT substrate which has high charge mobility, high potential holding characteristics, and low power consumption, by improving throughput of laser annealing, and performing laser annealing by irradiating a laser beam pattern within a TFT channel width at a high accuracy. Disclosed is a thin film transistor substrate 1 wherein a plurality of thin film transistors 10 are disposed in columns and rows on a substrate 1A. The thin film transistors 10 are respectively provided with laser annealed sections 10A formed by laser annealing amorphous silicon layers 13 into polysilicon layers, said amorphous silicon layers forming channel regions, the laser annealed sections 10A are disposed at a set pitch in the scanning direction S in which the substrate and a laser beam for performing the laser annealing relatively move, and the thin film transistor substrate has each of the laser annealed sections 10 within a channel width W formed in the direction orthogonal to the scanning direction S, said each of the laser annealed sections having a width smaller than the channel width.

Description

technical field [0001] The invention relates to a thin film transistor substrate, a display panel provided with the thin film transistor substrate, and a laser annealing method for forming the thin film transistor substrate. Background technique [0002] As display panel substrates such as liquid crystal panels and organic EL panels of an active matrix driving method, generally known thin film transistor substrates are provided with thin film transistors (TFTs) arranged on each of a plurality of pixel electrodes arranged in a dot matrix. : thin film transistor). In particular, in the case of a display panel for color display, since RGB sub-pixels are aggregated into one pixel, a thin-film transistor is arranged for each sub-pixel that is three times the number of pixels on the thin-film transistor substrate. [0003] As thin film transistors (hereinafter referred to as TFTs), amorphous silicon TFTs excellent in switching characteristics have been used in recent years. Rega...

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Problems solved by technology

[0004] Although amorphous silicon TFT has good switching characteristics, there is "low electron mobility in the channel region, which is 0.5cm 2 / Vs” shortcoming, unable to fully cope with the high electron mobility required by higher density and high definition display panels in the future

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