Segmented grid field plate vertical current aperture power device and manufacturing method thereof

Abstract

The invention discloses a subsection gate field plate vertical type current aperture power device. The current aperture power device comprises a drain (11), a substrate (1), a drifting layer (2), an aperture layer (3), two symmetrical two-stage-step-shaped current blocking layers (4), a channel layer (6), a barrier layer (7) and a gate (10) from the bottom up; two sources (9) are deposited on the two sides of the barrier layer (7); two injection regions (8) are formed below the two sources (9) through ion implantation; all regions, except the drain bottom, are covered with a passivation layer (13); a subsection gate field plate (12) is manufactured in the passivation layer on the two sides separately; the subsection gate field plate consists of multiple mutually-independent floating field plates and a gate field plate; the gate field plate is electrically connected with the gate; and an aperture (5) is formed between the two current blocking layers (4). The current aperture power device has high breakdown voltage, simple process, low conduction resistance and high rate of finished products, and can be used for a power electronic system.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to a semiconductor device, in particular to a segmented grid field plate vertical current aperture power device, which can be used in a power electronic system. [0002] technical background [0003] Power semiconductor devices are the core components of power electronics technology. As energy and environmental issues become increasingly prominent, research and development of new high-performance, low-loss power devices has become one of the effective ways to improve power utilization, save energy, and alleviate energy crises. In the research of power devices, there is a serious restrictive relationship between high speed, high voltage and low on-resistance. Reasonable and effective improvement of this restrictive relationship is the key to improving the overall performance of the device. With the development of microelectronics technology, the performance of traditional first...

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Problems solved by technology

However, up to now, there is still no precedent of the field plate structure being successfully applied to GaN-based current aperture heterojunction field effect devices at home and abroad. This is mainly due to the inherent defects in the structure of GaN-based current aperture heterojunction field effect devices. As a result, the strongest electric field peak in the device drift layer is located near the interface between the current blocking layer and the aperture layer, and the electric field peak is far away from the surfaces on both sides of the drift layer, so the field plate structure can hardly play the role of effectively modulating the electric field distribution in the device, even in GaN The field plate structure is used in the base current aperture heterojunction field effect device, and there is almost no improvement in device performance

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