Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Flexible pressure sensor manufacturing method based on V-shaped groove array electrode

A pressure sensor and array electrode technology, applied in the field of flexible sensing and micro-nano systems, can solve the problems of easy breakage of metal electrodes, sensor failure, easy detachment of metal materials and flexible substrates, etc., to improve sensitivity and enhance adhesion. additive effect

Inactive Publication Date: 2017-07-14
ZHONGBEI UNIV
View PDF7 Cites 26 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the traditional large-volume and weak-function sensors are often difficult to meet the above requirements, so they have been gradually replaced by various types of high-performance miniature sensors
[0004] From the latest research on flexible sensors at home and abroad, it is mainly the research on flexible pressure sensors. Commonly used flexible substrate materials are polyethylene terephthalate resin (Polyethylene terephthalate, PET for short), polyvinylidene fluoride ( Polyvinylidene fluoride (PVDF for short) film, polyethylenedioxythiophene (PEDOT for short) conductive polymer, etc., are based on silver nanowires and carbon nanotubes to realize the preparation of flexible pressure sensors, but there are metal materials and flexible substrates that are easy to fall off, When a large deformation occurs, the metal electrode is easy to break and cause the sensor to fail

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Flexible pressure sensor manufacturing method based on V-shaped groove array electrode
  • Flexible pressure sensor manufacturing method based on V-shaped groove array electrode
  • Flexible pressure sensor manufacturing method based on V-shaped groove array electrode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] The fabrication process of the flexible pressure sensor is as follows: figure 1 As shown, the process is simply summarized as: (1) oxidation; (2) photolithography; (3) wet etching; (4) nanoimprinting; (5) PDMS inversion; (6) sputtering, packaging.

[0032] Fabrication of "V" Groove Array Electrodes for Flexible Pressure Sensors

[0033] A single-side polished 4-inch -side N-type silicon oxide wafer (Suzhou Ruicai Semiconductor Co., Ltd.), with a resistance of 2-5Ω and a thickness of 500μm. Use H respectively in the thousand-class clean room 2 SO 4 (concentrated): H 2 o 2 =3:1, SC1 solution, SC2 solution to clean the silicon wafer to remove surface hydrocarbons, alkali ions, and metal pollutants. In order to prevent the surface of the silicon wafer from absorbing water to produce pinholes and air bubbles in the photoresist, causing the drift of the photoresist to damage the photolithographic pattern, the silicon wafer was placed in an HMDS oven and baked at 135°C fo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the field of flexible sensing and the field of micro-nano systems, and specifically relates to a method for manufacturing a flexible pressure sensor based on "V" groove array electrodes. The fabrication method of flexible pressure sensor based on "V"-shaped array electrodes, including the preparation of flexible pressure sensor "V"-groove array electrodes and the preparation of carbon nanotubes / PDMS polymers, two flexible pressure sensors "V" The groove array electrodes are used as the upper electrode and the lower electrode respectively, and the carbon nanotube / PDMS composite film is used as the intermediate dielectric layer, and the flexible pressure sensor is formed by packaging. Aiming at the problem of poor adhesion between metal materials and flexible substrates, the present invention selects polydimethylsiloxane (PDMS) as the flexible substrate material, metal Ag as the electrode material, and uses the plasma process to modify the surface of the PDMS flexible substrate The treatment is used to enhance the adhesion between metal Ag and PDMS, and the designed "V" groove array microelectrode structure effectively solves the problem of metal electrode fracture when the flexible pressure sensor undergoes large deformation.

Description

technical field [0001] The invention belongs to the field of flexible sensing and the field of micro-nano systems, and specifically relates to a method for manufacturing a flexible pressure sensor based on "V" groove array electrodes. Background technique [0002] Sensing technology is one of the important functional units of measurement, measurement and control and intelligent automation systems in today's society. The research and development of sensing technology has become a development field that every country attaches great importance to. In recent years, flexible electronic technology has set off a technological revolution worldwide due to its huge performance advantages and rapid development speed. The study of flexible sensors has also become a new challenge and new field for researchers. [0003] A pressure sensor is a sensor that can sense changes in external pressure and is widely used in wearable, attachable electronic skins and electronic devices. In order to...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B81C1/00G03F7/00G03F7/16G03F7/40
CPCB81C1/00166B81C1/00015B81C1/00849B81C2201/01B81C2201/0198G03F7/0002G03F7/162G03F7/40
Inventor 段俊萍崔建利张斌珍唐军
Owner ZHONGBEI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products