Preparation method for catalyst prepared from Si-based material having undergone lattice doping by metallic element, and method for oxygen-free preparation of ethylene from methane
A lattice doping, metal element technology, applied in the direction of metal/metal oxide/metal hydroxide catalyst, catalyst, carbon compound catalyst, etc., can solve the problem of short catalyst life, high selectivity of aromatic hydrocarbon products, and no large-scale application prospects, etc.
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[0059] 1. Preparation of catalyst
[0060] The preparation methods of lattice-doped catalysts include solid-phase doping techniques such as chemical vapor deposition (MCVD), sol-gel doping, and porous Si compound infiltration. Catalysts are marked as:
Embodiment 1
[0063] Improved Chemical Vapor Deposition (MCVD)
[0064] Use 30mL / min of high-purity oxygen to reduce SiCl 4 Liquid, FeCl 3 Aqueous solution bubbling into high temperature MCVD, SiCl at 1600 °C 4 and FeCl 3 Oxidative deposition was performed to obtain Fe-doped SiO 2 The powder material was then melted for 3 hours at a temperature of 2200 ° C and a pure oxygen atmosphere of 2 bar, and then rapidly cooled in ice water to obtain 0.2 wt.% catalyst.
Embodiment 2
[0066] Improved Chemical Vapor Deposition (MCVD)
[0067] Use 30mL / min of high-purity oxygen to reduce SiCl 4 Liquid, CoCl 2 , NiCl 2 Aqueous solution bubbling into high temperature MCVD, SiCl at 1600 °C 4 , CoCl 2 and NiCl 2 Oxidative deposition was carried out to obtain Co, Ni doped SiO 2 The powder material was then melted for 3 hours at a temperature of 2200°C in a 2 bar pure nitrogen atmosphere, and then rapidly cooled in liquid nitrogen to obtain 0.5wt.%Co-0.5wt.% catalyst.
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