Magnetic tunnel junction and magnetic device and electronic equipment comprising same

Abstract

The invention relates to a magnetic tunnel junction and a magnetic device comparing the same. According to one embodiment, the magnetic tunnel junction can comprises a reference magnetic layer, a spacing layer and a composite free magnetic layer, wherein the spacing layer is arranged on the reference magnetic layer, the composite free magnetic layer is arranged on the spacing layer and comprises a first free magnetic layer, a spinning Hall effect (SHE) layer and a second bias magnetic layer, the first free magnetic layer is arranged at one side of the spacing layer, the SHE layer is arranged on the first free magnetic layer, the second bias magnetic layer is arranged on the SHE layer, ferromagnetic coupling or anti-ferromagnetic coupling between the first free magnetic layer and the second bias magnetic layer is induced by the SHE layer, one of the first free magnetic layer and the second bias magnetic layer has in-plane magnetic anisotropy, the other one of the first free magnetic layer and the second bias magnetic layer has vertical magnetic anisotropy, and the magnetic anisotropy of the second bias magnetic layer is larger than the magnetic anisotropy of the first free magnetic layer.

Description

technical field [0001] The present invention relates generally to spintronics, and more particularly, to a magnetic tunnel junction that enables pure current drive without the need for an applied external magnetic field, and to magnetic devices comprising such a magnetic tunnel junction, such as Magnetic random access memory and spin logic devices, etc., and electronic equipment including such magnetic devices. Background technique [0002] Magnetic tunnel junction (MTJ) has a wide range of applications, such as in magnetic memory, spin logic devices, magnetic sensors, etc., and thus is one of the important magnetic components that has been intensively studied. The magnetic tunnel junction generally includes a free magnetic layer, a reference magnetic layer and a tunneling barrier layer between them. The magnetic moment of the free magnetic layer can be flipped freely, while the magnetic moment of the reference magnetic layer is fixed. The tunnel barrier layer is formed of ...

AI Technical Summary

Problems solved by technology

E.g, Figure 1A and 1C The flipping scheme still needs to apply an external magnetic field, resulting in high power consumption and complicated operation, and the external magnetic field may affect adjacent devices, causing stability problems

for Figure 1B Although the scheme shown does not require an external magnetic field, its flipping speed is low, so it is not suitable for high-speed operating devices, and it will consume more energy to complete the flipping

In addition, this scheme cannot be applied to the vertical magnetization structure, so higher magnetic tunnel junction density cannot be achieved, which is not conducive to the miniaturization of the device

The above defects also limit the practical application of magnetic tunnel junctions in various electromagnetic components.

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