Method for preparing transparent copper thin film conductive electrode through replacement reaction via atomic layer deposition technology

Abstract

The invention belongs to the technical field of transparent conductive electrode preparing, and relates to a method for preparing a transparent copper thin film conductive electrode through a replacement reaction via an atomic layer deposition technology. The method comprises the steps that firstly, a transparent substrate is subjected to cleaning treatment and then blow-dried through nitrogen; then, two separated protective films are pasted on the surface of the same side of the transparent substrate, the two protective films are symmetrically located at the positions, close to the edge, of the surface of the substrate, a graphical transparent substrate is obtained, and then the graphical transparent substrate is fed into a reaction chamber of atomic layer deposition equipment to carry out growth of a transparent copper thin film; and finally, the transparent substrate and the transparent copper thin film growing on the transparent substrate in a deposition manner are subjected to high-temperature annealing, the annealing temperature ranges from 200 DEG C to 300 DEG C, the annealing time ranges from 20 min to 30 min, and the graphical uniform transparent copper thin film conductive electrode is obtained on the transparent substrate. The transparent copper thin film conductive electrode prepared through the method is good in uniformity and excellent in photoelectric property and can be used for manufacturing solar cells, light-emitting diodes, LCDs, mobile phones and other photoelectric devices.

Description

technical field [0001] The invention belongs to the technical field of preparation of transparent conductive electrodes, and in particular relates to a method for preparing transparent copper thin film conductive electrodes through displacement reaction by using atomic layer deposition technology. Background technique [0002] Transparent conductive electrodes are widely used in flat panel displays, solid-state lighting, microdisplays, solar cells, and photodetectors, and are key components of optoelectronic devices. At present, the most commonly used film material for transparent conductive electrodes is the ITO film prepared on glass or other transparent substrates by magnetron sputtering technology. However, although the ITO film has relatively good light transmittance, its application also has many limitations, such as : a) The electrical conductivity is relatively poor; b) The indium required for the preparation of the ITO film is a rare metal, which is less in the eart...

AI Technical Summary

Problems solved by technology

Among them, the vacuum physical method mainly refers to the magnetron sputtering method, which can prepare dense and uniform transparent conductive films with good physical adhesion. poor

The chemical method is mainly the sol-gel method. The advantage of this method is that the production equipment is simple and it is easy to achieve uniform doping of multiple components, but the physical adhesion between the conductive film and the substrate is poor and the high temperature treatment limits the substrate of the transparent conductive electrode.

Images