Method for preparing graphene on silicon base without metal catalyst

Abstract

The invention discloses a method for preparing graphene on a silicon base without a metal catalyst. According to the method, a method of radio frequency magnetron sputtering technology and chemical vapor deposition is adopted, a hexagonal boron nitride target serves as a magnetron sputtering target material, and the silicon base with a 300 nm silicon dioxide <100> crystal orientation serves as a sputtering substrate, by directly depositing a boron-nitrogen thin film on the silicon base to serve as a catalyst, the graphene grows on the silicon base, the step of sputtering deposition of the metal catalyst is omitted, and the effects of optimizing the process, saving resources and reducing cost are achieved. Meanwhile, by controlling parameters in the chemical vapor deposition process, the graphene obtained through preparation is good in consistency and has good thermal and chemical stability.

Description

technical field [0001] The invention belongs to the technical field of graphene preparation, in particular to a method for preparing graphene on a silicon base without a metal catalyst. Background technique [0002] Graphene is carbon atoms based on sp 2 A hexagonal honeycomb structure composed of hybridization, a two-dimensional crystal with a thickness of only one atomic layer. In recent years, graphene has shown many exciting properties and potential application prospects in the fields of microelectronics, quantum physics, materials, chemistry, etc., and has attracted extensive attention from the scientific and industrial circles. [0003] At present, common methods for preparing graphene include mechanical exfoliation, redox, SiC epitaxial growth, and chemical vapor deposition (CVD). Among them, the use of chemical vapor deposition (CVD) on a silicon substrate is the most likely method to achieve industrial production of high-quality, large-area graphene. There are tw...

AI Technical Summary

Problems solved by technology

There are two main types of graphene prepared by chemical vapor deposition on silicon substrates: the first is to deposit a layer of metal catalyst on the silicon dioxide silicon wafer, and then grow graphite on the metal catalyst by chemical vapor deposition. Graphene, or continue to deposit other graphene growth substrates on the metal catalyst, and then grow graphene, but this method is cumbersome, and the cost of metal materials is high; the second is to first use copper foil, nickel foil, etc. Graphene is grown on the bottom, and then the graphene is transferred to a silicon wafer with a silicon dioxide layer by a transfer method such as an etching substrate method. However, this method requires very delicate manual operations and is not conducive to large-scale production.

At the same time, this method will introduce defects in graphene during the transfer process, making the quality of graphene unstable

Images